A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

Methods for providing a sensor integrated circuit package including employing a conductive leadframe and forming a non-conductive die paddle in relation to the leadframe. The method can further include placing a die on the non-conductive die paddle to form an assembly, forming at least one electrical connection between the die and the leadframe, and overmolding the assembly to form an integrated circuit package.

A magnetic field sensor includes a lead frame, a semiconductor die supporting a magnetic field sensing element, a non-conductive mold material enclosing the die and a portion of the lead frame, a ferromagnetic mold material secured to the non-conductive mold material and a securing mechanism to securely engage the mold materials. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet. The ferromagnetic mold material may be tapered and includes a non-contiguous central region, as may be an aperture or may contain the non-conductive mold material or an overmold material. Further embodiments include die up, lead on chip, and flip-chip arrangements, wafer level techniques to form the concentrator or bias magnet, integrated components, such as capacitors, on the lead frame, and a bias magnet with one or more channels to facilitate overmolding.

A magnetic field sensor includes a lead frame, a passive component, semiconductor die supporting a magnetic field sensing element and attached to the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a ferromagnetic mold material secured to a portion of the non-conductive mold material. The lead frame has a recessed region and the passive component is positioned in the recessed region. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet.

Embodiments of the present application provide the chip packaging structure, the chip module and the electronic terminal. In the chip packaging structure, the chip is accommodated in the trench of the substrate to decrease the thickness and volume of the chip packaging structure; and the plastic package is provided on the surface of the substrate on which the chip is disposed to plastically package the chip, which not only ensures the structural strength of the chip packaging structure, but also reduces the warpage that may be caused due to the decrease of the thickness of the chip packaging structure as much as possible. In addition, the surface of the plastic package is treated to be a flat surface, such that the chip module has good flatness and the adaptability of the chip module is improved.

A multi-chip module includes two silicon bridge interconnects and three components that are tied together by the bridges with one of the components in the center. At least one of the silicon bridge interconnects is bent to create a non-planar chip-module form factor. Cross-connected multi-chip silicon bent-bridge interconnect modules include the two silicon bridges contacting the center component at right angles to each other, plus a fourth component and a third silicon bridge interconnect contacting the fourth component and any one of the original three components.

In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.

A semiconductor device includes a resin member, a die pad including a first surface on which a semiconductor chip is disposed and covered by the resin member, and a second surface opposite to the first surface and partially covered by the resin member such that a first portion of the second surface is exposed from the resin member, and a plurality of electrodes each separated from the die pad and including a first surface connected to the semiconductor chip and covered by the resin member, and a second surface partially covered by the resin member such that a second portion of the second surface is exposed from the resin member. The first portion of the die pad includes at least four sides, each of which is nonparallel to a side of the second portion of one of the electrodes that faces the side.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.