In interconnect fabrication (e.g. a damascene process), a conductive layer is formed over a substrate with holes, and is polished to provide interconnect features in the holes. To prevent erosion/dishing of the conductive layer at the holes, the conductive layer is covered by a sacrificial layer (possibly conformal) before polishing; then both layers are polished. Initially, before polishing, the conductive layer and the sacrificial layer are recessed over the holes, but the sacrificial layer is polished at a lower rate to result in a protrusion of the conductive layer at a location of each hole. The polishing can continue to remove the protrusions and provide a planar surface.

Exemplary substrate electrochemical planarization apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include a retaining wall extending from the chuck body. The apparatuses may include an electrolyte delivery port disposed radially inward of the retaining wall. The apparatuses may include a spindle that is positionable over the chuck body. The apparatuses may include an end effector coupled with a lower end of the spindle. The end effector may be conductive. The apparatuses may include an electric contact extending from the chuck body or retaining wall. The apparatuses may include a current source. The current source may be configured to provide an electric current to an electrolyte within an open interior defined by the retaining wall.

In interconnect fabrication (e.g. a damascene process), a conductive layer is formed over a substrate with holes, and is polished to provide interconnect features in the holes. To prevent erosion/dishing of the conductive layer at the holes, the conductive layer is covered by a sacrificial layer (possibly conformal) before polishing; then both layers are polished. Initially, before polishing, the conductive layer and the sacrificial layer are recessed over the holes, but the sacrificial layer is polished at a lower rate to result in a protrusion of the conductive layer at a location of each hole. The polishing can continue to remove the protrusions and provide a planar surface.

Embodiments of the invention provide a method for metal filling and planarization of a recessed feature in a substrate. According to one embodiment the method includes providing the substrate containing the recessed feature below a planar surface of the substrate, filling the recessed feature with a metal layer, the metal layer forming excess metal above the recessed feature, oxidizing the excess metal by electrochemical oxidation to form an oxidized metal layer above the planar surface of the recessed feature, and removing the oxidized metal layer by chemical mechanical planarization (CMP). According to another embodiment, the method includes, following the filling, performing a cyclical electrochemical oxidation and etching process that at least substantially removes the excess metal layer above the planar surface of the recessed feature.

In interconnect fabrication (e.g. a damascene process), a conductive layer is formed over a substrate with holes, and is polished to provide interconnect features in the holes. To prevent erosion/dishing of the conductive layer at the holes, the conductive layer is covered by a sacrificial layer (possibly conformal) before polishing; then both layers are polished. Initially, before polishing, the conductive layer and the sacrificial layer are recessed over the holes, but the sacrificial layer is polished at a lower rate to result in a protrusion of the conductive layer at a location of each hole. The polishing can continue to remove the protrusions and provide a planar surface.

In interconnect fabrication (e.g. a damascene process), a conductive layer is formed over a substrate with holes, and is polished to provide interconnect features in the holes. To prevent erosion/dishing of the conductive layer at the holes, the conductive layer is covered by a sacrificial layer (possibly conformal) before polishing; then both layers are polished. Initially, before polishing, the conductive layer and the sacrificial layer are recessed over the holes, but the sacrificial layer is polished at a lower rate to result in a protrusion of the conductive layer at a location of each hole. The polishing can continue to remove the protrusions and provide a planar surface.

A photoelectric fluid field cluster catalytic method for atomic-scale deterministic processing, comprises the following steps: selecting nanoparticles with photocatalytic activity as a photocatalytic medium, and using a photoreduction method to realize the precipitation of metal nanoparticles on a surface of the photocatalytic medium, thus creating photoelectrocatalytic clusters; illuminating a coupling area between a surface to be processed of a workpiece, the photoelectrocatalytic clusters and a flexible tool with a catalytic light source, and simultaneously applying a bias voltage to a conductive tray of the workpiece; and applying a normal load to a flexible tool head and setting a rotation speed to generate a hydrodynamic pressure to drive a polishing solution to flow, thus enabling controllable removal with atomic-level precision. The disclosure utilizes the metal particles in the photoelectrocatalytic clusters to capture photogenerated electrons, thereby prolonging the lifetime of photogenerated carriers.

A photoelectric fluid field cluster catalytic method for atomic-scale deterministic processing, comprises the following steps: selecting nanoparticles with photocatalytic activity as a photocatalytic medium, and using a photoreduction method to realize the precipitation of metal nanoparticles on a surface of the photocatalytic medium, thus creating photoelectrocatalytic clusters; illuminating a coupling area between a surface to be processed of a workpiece, the photoelectrocatalytic clusters and a flexible tool with a catalytic light source, and simultaneously applying a bias voltage to a conductive tray of the workpiece; and applying a normal load to a flexible tool head and setting a rotation speed to generate a hydrodynamic pressure to drive a polishing solution to flow, thus enabling controllable removal with atomic-level precision. The disclosure utilizes the metal particles in the photoelectrocatalytic clusters to capture photogenerated electrons, thereby prolonging the lifetime of photogenerated carriers.