Embodiments include forming a die, the die including a pad and a passivation layer over the pad. A via is formed to the pad through the passivation layer. A solder cap is formed on the via, where a first material of the solder cap flows to the sidewall of the via. In some embodiments, the via is encapsulated in a first encapsulant, where the first encapsulant is a polymer or molding compound selected to have a low co-efficient of thermal expansion and/or low curing temperature. In some embodiments, the first material of the solder cap is removed from the sidewall of the via by an etching process and the via is encapsulated in a first encapsulant.

An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.

A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)

H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO.sub.3.sup.− and Cl.sup.−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

Implementations of die singulation systems and related methods may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and forming a groove at the pattern of the photoresist layer only partially through a thickness of the backside metal layer. The groove may be located in the die street of the substrate. The method may also include etching through a remaining portion of the backside metal layer located in the die street, removing the photoresist layer, and singulating the plurality of die included in the substrate by removing substrate material in the die street.

Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes a gate stack formed across the first fin structure and a first source/drain structure formed over the first fin structure adjacent to the gate stack. The semiconductor device structure further includes a contact structure formed over the first source/drain structure and a dielectric structure formed through the contact structure. In addition, a bottom surface of the contact structure is wider than a top surface of the contact structure.

A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.

An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.