A semiconductor structure and forming method thereof are provided. A substrate includes a region. A first gate structure and a sacrificial gate structure are recessed in the substrate and disposed in the region. The sacrificial gate structure is adjacent to the first gate structure. A first contact is electrically connected to the first gate structure. A sacrificial gate masking structure is disposed over the sacrificial gate structure. An upper surface of the sacrificial gate structure is entirely covered by the sacrificial gate masking structure.

Gate-all-around integrated circuit structures having additive gate structures are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A P-type gate stack is over the first vertical arrangement of horizontal nanowires, the P-type gate stack having a P-type conductive layer over a first gate dielectric, and an intervening conductive seed layer between the P-type conductive layer and the first gate dielectric. An N-type gate stack is over the second vertical arrangement of horizontal nanowires, the N-type gate stack having an N-type conductive layer over a second gate dielectric, and the intervening conductive seed layer between the N-type conductive layer and the second gate dielectric. The P-type gate stack is in contact with the N-type gate stack.

Aspects of the present disclosure provide 3D semiconductor apparatus and a method for fabricating the same. The 3D semiconductor apparatus can include a first semiconductor device including first S/D regions, a first gate region sandwiched by the first S/D regions, and a first channel surrounded by the first S/D regions and the first gate region; a second semiconductor device stacked on the first semiconductor device that includes second S/D regions, a second gate region sandwiched by the second S/D regions, and a second channel surrounded by the second S/D regions and the second gate region and formed vertically in-situ on the first channel; and silicide formed between the first and second semiconductor devices where the first and second channels interface and coupled to an upper one of the first S/D regions of the first semiconductor device and a lower one of the second S/D regions of the second semiconductor device.

Various embodiments of the present disclosure are directed towards an integrated chip including a gate dielectric structure over a substrate. A metal layer overlies the gate dielectric structure. A conductive layer overlies the metal layer. A polysilicon layer contacts opposing sides of the conductive layer. A bottom surface of the polysilicon layer is aligned with a bottom surface of the conductive layer. A dielectric layer overlies the polysilicon layer. The dielectric layer continuously extends from sidewalls of the polysilicon layer to an upper surface of the conductive layer.

Various embodiments of the present disclosure are directed towards an integrated chip including a gate dielectric structure over a substrate. A metal layer overlies the gate dielectric structure. A conductive layer overlies the metal layer. A polysilicon layer contacts opposing sides of the conductive layer. A bottom surface of the polysilicon layer is aligned with a bottom surface of the conductive layer. A dielectric layer overlies the polysilicon layer. The dielectric layer continuously extends from sidewalls of the polysilicon layer to an upper surface of the conductive layer.

Aspects of the present disclosure provide 3D semiconductor apparatus and a method for fabricating the same. The 3D semiconductor apparatus can include a first semiconductor device including first S/D regions, a first gate region sandwiched by the first S/D regions, and a first channel surrounded by the first S/D regions and the first gate region; a second semiconductor device stacked on the first semiconductor device that includes second S/D regions, a second gate region sandwiched by the second S/D regions, and a second channel surrounded by the second S/D regions and the second gate region and formed vertically in-situ on the first channel; and silicide formed between the first and second semiconductor devices where the first and second channels interface and coupled to an upper one of the first S/D regions of the first semiconductor device and a lower one of the second S/D regions of the second semiconductor device.

Aspects of the present disclosure provide 3D semiconductor apparatus and a method for fabricating the same. The 3D semiconductor apparatus can include a first semiconductor device including first S/D regions, a first gate region sandwiched by the first S/D regions, and a first channel surrounded by the first S/D regions and the first gate region; a second semiconductor device stacked on the first semiconductor device that includes second S/D regions, a second gate region sandwiched by the second S/D regions, and a second channel surrounded by the second S/D regions and the second gate region and formed vertically in-situ on the first channel; and silicide formed between the first and second semiconductor devices where the first and second channels interface and coupled to an upper one of the first S/D regions of the first semiconductor device and a lower one of the second S/D regions of the second semiconductor device.

A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers on either side of the gate, the first spacers being located on sides of the gate and the second spacers being located on sides of the first spacers. The method includes forming the gates of the transistors, forming the first spacers, forming the second spacers siliciding the gates so as to form the silicided portions of the gates, and removing the second spacers. The removal of the second spacers takes place during the silicidation of the gates and before the silicided portions are fully formed.

A method for forming a semiconductor device is disclosed. A semiconductor substrate having thereon an NMOS region, a PMOS region, and a non-silicide region is provided. An NMOS transistor is formed within the NMOS region and a PMOS transistor is formed within the PMOS region. A stress memorization technique (SMT) layer covering the NMOS region, the PMOS region, and the non-silicide region is formed. The SMT layer is removed from the PMOS region. A stress is transferred from the SMT layer into an N-channel of the NMOS transistor. The SMT layer is removed from the NMOS region, while leaving the SMT layer in the non-silicide region intact. A self-aligned silicidation (SAC) process is performed to form a salicide layer in the NMOS region and the PMOS region.

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.