A power electronics module includes a glass layer with one or more vias extending through the glass layer and having an electrically and thermally conductive material disposed within the one or more vias, a power electronic device directly bonded to a first surface of the glass layer, and, a cooling structure thermally coupled to a second surface of the glass layer.

Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

A semiconductor device includes a lower substrate, a semiconductor element mounted on an upper surface of the lower substrate, an upper substrate disposed on an upper surface of the semiconductor element, one or more through holes extending through the upper substrate in a thickness-wise direction, an encapsulation resin disposed between the lower substrate and the upper substrate and encapsulating the semiconductor element, a wiring layer disposed on an upper surface of the upper substrate, and a covering resin covering the upper surface of the upper substrate and filling the through holes.

Multi-die composite packages including directly bonded IC die and at least one electro-thermo-mechanical die (ETMD). An ETMD is distinguished from an active IC die as an ETMD is a passive die lacking any semiconductor devices, such as transistors. In exemplary embodiments, an ETMD includes a substrate, which may be a crystalline semiconductor material, for example, and one or more through substrate vias (TSVs) passing through a thickness of the substrate. The TSVs may enable a ETMD to electrically interconnect an (active) IC die of a composite package to another IC die of the package or to a package host.

Disclosed is a semiconductor package device comprising a lower redistribution substrate, a first semiconductor chip on the lower redistribution substrate, vertical structures on the lower redistribution substrate, and a first molding member on the lower redistribution substrate and on the first semiconductor chip and the vertical structures. The vertical structure includes a first post having a first diameter, a second post on the first post and having a second diameter, and a bonding pad on the second post opposite the first post and having a third diameter. The first, second, and third diameters are different from each other. The third diameter is greater than the second diameter.

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature.

A semiconductor package includes a redistribution substrate including a first redistribution layer; a semiconductor chip electrically connected to the first redistribution layer; a vertical connection structure adjacent a periphery of the semiconductor chip and electrically connected to the first redistribution layer; and an encapsulant on the vertical connection structure. The vertical connection structure includes a metal pillar having a bottom surface facing the redistribution substrate, a top surface positioned opposite to the bottom surface, and a side surface positioned between the bottom surface and the top surface. The vertical connection structure further includes a plating layer on each of the bottom surface, the top surface, and the side surface of the metal pillar, and having a roughened surface.

A package includes a first die that includes a first metallization layer, one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends across the first metallization layer between each first bond pad via and the first metallization layer, and one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends across each first bond pad via between a first bond pad and the first bond pad via, and a second die including one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.

Packaged semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes a substrate and a plurality of integrated circuit dies coupled to the substrate. The device also includes a molding material disposed over the substrate between adjacent ones of the plurality of integrated circuit dies. A cap layer is disposed over the molding material and the plurality of integrated circuit dies, wherein the cap layer comprises an electrically conductive material that directly contacts the molding material and each of the plurality of integrated circuit dies.

A component carrier for carrying electronic components, wherein the component carrier comprises an at least partially electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end, wherein the at least one electronic component is electrically contacted directly to the component contacting end, wherein at least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure, and wherein the wiring contacting end is electrically contacted directly to the wiring structure.