Patent classifications
H01L2224/08238
Semiconductor device and manufacturing method thereof
A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.
OFFSET INTERPOSERS FOR LARGE-BOTTOM PACKAGES AND LARGE-DIE PACKAGE-ON-PACKAGE STRUCTURES
An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.
PLANAR INTEGRATED CIRCUIT PACKAGE INTERCONNECTS
Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.
Selective micro device transfer to receiver substrate
A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.
SELECTIVE MICRO DEVICE TRANSFER TO RECEIVER SUBSTRATE
A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.
Printed structures with electrical contact having reflowable polymer core
A printed structure comprises a device comprising device electrical contacts disposed on a common side of the device and a substrate non-native to the device comprising substrate electrical contacts disposed on a surface of the substrate. At least one of the substrate electrical contacts has a rounded shape. The device electrical contacts are in physical and electrical contact with corresponding substrate electrical contacts. The substrate electrical contacts can comprise a polymer core coated with a patterned contact electrical conductor on a surface of the polymer core. A method of making polymer cores comprising patterning a polymer on the substrate and reflowing the patterned polymer to form one or more rounded shapes of the polymer and coating and then patterning the one or more rounded shapes with a conductive material.
Variable pitch multi-needle head for transfer of semiconductor devices
A direct transfer apparatus includes a dot matrix transfer head, which includes an impact wire housing and a plurality of impact wires disposed within the impact wire housing and extending out of the impact wire housing. A guide head is attached to the impact wire housing. The guide head includes multiple holes configured to arrange the plurality of impact wires in a matrix configuration, the matrix configuration being a matched-pitch configuration.
STRUCTURES AND METHODS FOR ELECTRICALLY CONNECTING PRINTED HORIZONTAL DEVICES
A printed structure comprises a device comprising device electrical contacts disposed on a common side of the device and a substrate non-native to the device comprising substrate electrical contacts disposed on a surface of the substrate. At least one of the substrate electrical contacts has a rounded shape. The device electrical contacts are in physical and electrical contact with corresponding substrate electrical contacts. The substrate electrical contacts can comprise a polymer core coated with a patterned contact electrical conductor on a surface of the polymer core. A method of making polymer cores comprising patterning a polymer on the substrate and reflowing the patterned polymer to form one or more rounded shapes of the polymer and coating and then patterning the one or more rounded shapes with a conductive material.
Multi-axis movement for transfer of semiconductor devices
A method for executing a direct transfer of semiconductor device die from a first substrate to transfer locations on a second substrate. The method includes determining a position of impact wires disposed on a transfer head, semiconductor device die, and transfer locations; determining whether there are at least two positions that an impact wire, a semiconductor device die, and a transfer locations are aligned within a threshold tolerance; and transferring, by the impact wires, the semiconductor device die such that the semiconductor device die detaches from the first substrate and attaches to transfer locations on the second substrate. The transferring being completed based at least in part on determining that the impact wire, the semiconductor device die, and the circuit trace are aligned within the threshold tolerance.
METHOD AND APPARATUS TO CONTROL TRANSFER PARAMETERS DURING TRANSFER OF SEMICONDUCTOR DEVICES
An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.