Implementations of semiconductor packages may include a first die including a plurality of contact pads, a second die including a plurality of contact pads, a plurality of solder interconnects bonding the plurality of contact pads of the first die to the plurality of contact pads of the second die, and a plurality of magnetic particles each coated in an oxide included in each of the plurality of solder interconnects.

Implementations of semiconductor packages may include a first die including a plurality of contact pads, a second die including a plurality of contact pads, a plurality of solder interconnects bonding the plurality of contact pads of the first die to the plurality of contact pads of the second die, and a plurality of magnetic particles each coated in an oxide included in each of the plurality of solder interconnects.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

There are provided a semiconductor memory device and a method for manufacturing the same. The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, a second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.

There are provided a semiconductor memory device and a method for manufacturing the same. The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, a second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.