A semiconductor module includes an insulated circuit board including wiring boards each having a thickness between 600 and 900 m; a wide-gap semiconductor chip disposed on a wiring board via a first bonding material and having a thickness between 50 and 120 m; and a conductive member including a first bonding part, a beam part, and a second bonding part. The first bonding part is connected to the semiconductor chip via a second bonding material, and has a thickness between 0.1 and 0.8 mm and an area between 25 and 60% of the area of the semiconductor chip in plan view. The beam part extends continuously from the first bonding part via a first bent part. The second bonding part extends continuously from the beam part via a second bent part and is connected to a different wiring board adjacent to the wiring board with the semiconductor chip thereon.

A power semiconductor module has a substrate, a power semiconductor, a connecting device, a potting body, a pressure device, external terminal elements and a housing, the substrate has an insulant body and substrate conductor tracks, wherein the power semiconductor component is arranged on one of the substrate conductor tracks and electrically connected thereto. The connecting device is a film stack having a first electrically conductive film, a second electrically conductive film, an electrically insulating film therebetween, the connecting device is covered by the potting body, the pressure device exerts pressure on the potting body with a spring, the external terminal elements are arranged on the preformed housing or connected in a positively locking manner and have a contact device to an assigned substrate conductor track.

A semiconductor device includes: a main substrate including a first main metal layer; a first semiconductor element supported by the main substrate; a first sub-substrate supported by the main substrate; and a sealing resin covering the first semiconductor element. The first sub-substrate includes a sub-insulating layer, and a first sub-metal layer and a second sub-metal layer that flank the sub-insulating layer in a thickness direction. The second sub-metal layer is electrically bonded to the first main metal layer, and the first sub-metal layer includes a region. The first sub-substrate further includes a connecting conductive portion that electrically connects the region and the second sub-metal layer.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A method of manufacturing the semiconductor device includes: preparing a lead member including a bonding part and a beam part continuously connected to the bonding part; preparing a pressing jig provided with an opening; placing the bonding part, with sintering material interposed, on a semiconductor chip provided on a conductive layer of an insulated circuit substrate, the insulated circuit substrate including an insulating plate and the conductive layer provided on the insulating plate; placing the pressing jig on the bonding part, the sintering material, the semiconductor chip, and the conductive layer so that the opening overlaps with the beam part; and applying pressure and heat to the bonding part, the sintering material, the semiconductor chip, and the conductive layer by the pressing jig.

A cooler includes a top plate having a heat dissipation surface, a bottom plate, a plurality of fins each connected to the heat dissipation surface, a peripheral wall surrounding the fins between the top plate and the bottom plate, and a refrigerant inlet and outlet provided at respective two ends of the peripheral wall in a first direction. Each fin has an inclined portion extending in an extending direction with first and second ends, and is inclined such that the second end is displaced toward the inlet relative to the first end in a first side view and toward one of opposite sides of the peripheral wall in a second direction perpendicular to the first direction relative to the first end in a second side view. The first and second side views are side views of the cooler viewed from the second direction and the first direction, respectively.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

In a method for producing a semiconductor assembly, a first power contact of a semiconductor element is materially bonded to a first metallization of a substrate, and a second power contact of the semiconductor element is materially bonded to a molded metal body, with the second power contact being arranged on a face of the semiconductor element facing away from the substrate. A metallic contacting element is contacted directly in a planar manner on the molded metal body for contacting the metallic contacting element to the second power contact via the molded metal body. The metallic contacting element is pressed against the semiconductor element via a dielectric pressing element, with a force acting perpendicularly on the semiconductor element being transferred via the dielectric pressing element.