An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

In various embodiments, a package may be provided. The package may include a chip carrier. The package may further include a chip arranged over the chip carrier. The package may also include encapsulation material encapsulating the chip and partially the chip carrier. A coolant receiving recess may be provided over the chip in the encapsulation material, wherein the coolant receiving recess is configured to receive coolant.

An increase in size of a device is suppressed. A semiconductor device includes: a P electrode provided to extend outward from a first side surface of a substrate; an AC electrode provided to extend outward from a second side surface opposite the first side surface; a first connecting electrode and a second connecting electrode each provided to extend outward from at least one of a third side surface intersecting with the first side surface and a fourth side surface opposite the third side surface, wherein the first connecting electrode does not overlap any of the P electrode and the AC electrode above the substrate, and the second connecting electrode does not overlap any of the P electrode and the AC electrode above the substrate.

The semiconductor device includes a switching element having a first electrode, a second electrode and a third electrode, a semiconductor element having a fourth electrode and a fifth electrode, a sealing resin covering the switching element and the semiconductor element, and a plurality of terminals partially exposed from the sealing resin. The first electrode and the fourth electrode are electrically connected inside the sealing resin. The plurality of terminals include a first terminal, a second terminal, and a third terminal. The first terminal electrically conducts to the second electrode. The second terminal electrically conducts to the fifth electrode. The third terminal electrically conducts to each of the first electrode and the fourth electrode. The first terminal and the second terminal are adjacent to each other.