A power conversion device includes a heat releasing heatsink, a printed circuit board provided on the heatsink and having a through hole and wires, a metal case having a depressed portion fitted in the through hole and mounted on a top of the heatsink, and a heat releasable insulating layer made of a ceramic material and disposed between a bottom of the depressed portion and a top portion of the heat sink. A power semiconductor element is mounted in the depressed portion and electrically connected to the wires of the printed circuit board.

This disclosure relates to a radio frequency (RF) transmission line for high performance RF applications. The RF transmission line includes a conductive layer and finish plating on the conductive layer. The finish plating includes a gold layer, a palladium layer proximate the gold layer, and a nickel layer proximate the palladium layer. The nickel layer has a thickness that allows a radio frequency signal received at the gold layer to penetrate the nickel layer and propagate in the conductive layer.

This disclosure relates to a mobile device with a transmission line for a radio frequency (RF) signal. The transmission line includes a bonding layer having a bonding surface, a barrier layer proximate the bonding layer, a diffusion barrier layer proximate the barrier layer, and a conductive layer proximate the diffusion barrier layer. The barrier layer and the diffusion barrier layer are configured to prevent conductive material from the conductive layer from entering the bonding layer. The diffusion barrier layer has a thickness sufficiently small such that a radio frequency signal is allowed to penetrate the diffusion barrier layer and propagate in the conductive layer.

This disclosure relates to a radio frequency (RF) transmission line for high performance RF applications. The RF transmission line includes a bonding layer having a bonding surface and configured to receive an RF signal, a barrier layer proximate the bonding layer, a diffusion barrier layer proximate the bonding layer and configured to prevent contaminant from entering the bonding layer, and a conductive layer proximate the diffusion barrier layer. The diffusion barrier layer has a thickness that allows the received RF signal to penetrate the diffusion barrier layer to the conductive layer. The diffusion barrier layer can be a nickel layer.

This disclosure relates to a diffusion barrier layer for a radio frequency (RF) transmission line. The diffusion barrier layer includes a material and has a thickness. The thickness of the diffusion barrier layer is sufficiently small such that an RF signal is allowed to penetrate the diffusion barrier layer. Related RF modules and mobile devices that include an RF transmission line with such a diffusion barrier layer are disclosed.

A semiconductor device includes a first conductive layer with first and second sections separated in a first direction. A first chip is on the first section and has a first, second and third electrodes. A second chip is on the second section and has a fourth and fifth electrode. A second conductive layer is between the sections of the first conductive layer in the first direction. The second conductive layer has a first connected section to which the second electrode is connected, a second connected section to which to the fifth electrode is connected, and a first clearance portion between the first and second connected sections in the first direction. A third conductive layer is spaced from the first conductive layer and the second conductive layer and is connected to the third electrode.

This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.

An electronic device includes an electrically insulating substrate, a digital signal processor, and a photonics assembly. The electrically insulating substrate includes a main body. The digital signal processor is disposed on a first surface of the electrically insulating substrate and is arranged relative to the electrically insulating substrate such that a portion of the digital signal processor extends beyond the main body of the electrically insulating substrate. The photonics assembly is disposed adjacent to the electrically insulating substrate and electrically coupled to the digital signal processor.

A semiconductor device includes: a heat sink; an insulating substrate; a bonding material; and a semiconductor element, wherein the insulating substrate is bonded to an upper surface of the heat sink through the bonding material, the semiconductor element is bonded to an upper surface of the insulating substrate, a thickness of the heat sink differs depending on a position of the heat sink in the in-plane direction, supporters are disposed on the upper surface of the heat sink, in a region in which the insulating substrate is bonded to the heat sink, and each of the supporters is in contact with the insulating substrate, and the upper surface of the heat sink is not parallel to the upper surface of the insulating substrate, in a region overlapping with the region in which the insulating substrate is bonded to the heat sink in a plan view.