A first integrated circuit chip is assembled to a second integrated circuit chip with a back-to-back surface relationship. The back surfaces of the integrated circuit chips are attached to each other using one or more of an adhesive, solder or molecular bonding. The back surface of at least one the integrated circuit chips is processed to include at least one of a trench, a cavity or a saw cut.

A cathode configured for a solid-state battery includes a body having grains of inorganic material sintered to one another, wherein the grains comprise lithium. A thickness of the body is from 3 μm to 100 μm. The first major surface and the second major surface have an unpolished granular profile such that the profile includes grains protruding outward from the respective major surface with a height of at least 25 nm and no more than 150 μm relative to recessed portions of the respective major surface at boundaries between the respective grains.

A semiconductor device includes first and second chips in a package. A first pad is on the first chip and electrically connected to a node between a power supply pad and a ground pad on the first chip. Second and third pads are on the second chip. An internal wiring connects the first pad to the second pad within the package. A power circuit on the semiconductor chip configured to supply a current to the second pad. A switch is on the second chip between the second pad and the power supply circuit to connect or disconnect the second pad from the power circuit. A control circuit is on the second chip and configured to output a first signal for the switch in response to a test signal supplied to the third pad and a second signal to the power circuit to cause the power circuit to output current.

A package substrate according to an aspect of the disclosure includes a substrate body, and a first power trace pattern and a first ground trace pattern disposed on a first surface of the substrate body. The first power trace pattern has a parent power line portion and at least one child power line portion branched from the parent power line portion, and the first ground trace pattern has a parent ground line portion and at least one child ground line portion branched from the parent ground line portion. At least a portion of the first power trace pattern is disposed to surround at least a portion of the first ground trace pattern, and at least a portion of the first ground trace pattern is disposed to surround at least a portion of the first power trace pattern.

Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.

An apparatus includes an integrated circuit and a substrate coupled to the integrated circuit. The substrate includes a primary layer having a first surface that is a first external surface of the substrate. The primary layer includes an open area that extends through the primary layer to an inner layer of the substrate. The substrate includes a secondary layer. The inner layer is located between the primary layer and the secondary layer. The inner layer includes a third surface that is orientated approximately parallel to the first surface of the primary layer. A portion of the third surface of the inner layer is exposed via the open area of the primary layer. A first plurality of wire bond pads are disposed on the portion of the third surface of the inner layer that is exposed via the open area of primary layer.

An object is to suppress the temperature rise of a semiconductor element due to the heat generation of a metal wire. A semiconductor device includes a printed circuit board including a first circuit pattern and a second circuit pattern, and a semiconductor element arranged on an upper surface of the first circuit pattern, in which, in the semiconductor element, a drain electrode is arranged on an upper surface thereof and a gate electrode and a source electrode are arranged on a lower surface thereof, the gate electrode and the source electrode are bonded to the upper surface of the first circuit pattern via a first bonding material, and the drain electrode is bonded to an upper surface of the second circuit pattern via a metal member connected to the upper surface of the semiconductor element.

A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.

Before a semiconductor die of a brittle compound semiconductor is encapsulated with a molding compound during package fabrication, side surfaces of the semiconductor die are treated to avoid or prevent surface imperfections from propagating and fracturing the crystal structure of the substrate of the III-V compound semiconductor under the stresses applied as the molding compound solidifies. Surfaces are treated to form a passivation layer, which may be a passivated layer of the substrate or a passivation material on the substrate. In a passivated layer, imperfections of an external layer are transformed to be less susceptible to fracture. Passivation material, such as a poly-crystalline layer on the substrate surface, diffuses stresses that are applied by the molding compound. Semiconductor dies in flip-chip and wire-bond chip packages with treated side surfaces as disclosed have a reduced incidence of failure caused by die fracturing.

The semiconductor device package comprises a die carrier, at least one semiconductor die disposed on the carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier, an encapsulant disposed above the semiconductor die, an electrical connector electrically connected with the contact pad, a drilling screw screwed through the encapsulant and connected with the electrical connector.