A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.

A semiconductor device includes a mounting substrate having a first surface, a semiconductor chip mounted on the first surface and having a second surface facing a side opposite to the first surface, and a wire extending from a first joint point on the first surface toward a second joint point on the second surface and electrically connecting the mounting substrate and the semiconductor chip to each other by connecting the first joint point and the second joint point to each other. The wire includes a first part, a first bent portion, a second part, a second bent portion, and a third part arranged in order from the first joint point toward the second joint point. The first part is positioned on the first surface side with respect to the second surface when viewed in a first direction along the first surface and the second surface.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A multi-chip package may include a package substrate including a first substrate pad and a second substrate pad, first semiconductor chips stacked on the package substrate in a steplike shape along a first direction, second semiconductor chips stacked on the first semiconductor chips in a steplike shape along a second direction opposite the first direction, first pad wires electrically connecting first bonding pads of the first semiconductor chips with each other, second pad wires electrically connecting second bonding pads of the second semiconductor chips with each other, a first substrate wire electrically connecting the first substrate pad with a first bonding pad of any one among the first semiconductor chips except for a lowermost first semiconductor chip, and a second substrate wire electrically connecting the second substrate pad with a second bonding pad of any one among the second semiconductor chips except for a lowermost second semiconductor chip.

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

A sensor chip package assembly and an electronic device having the sensor chip package assembly are disclosed, where the sensor chip package assembly includes: a metal substrate (100) which has a bonding pad region (11) and a placement region (12), the bonding pad region having a plurality of metal bonding pads (13); a sensor chip (200) which is located on an upper surface of the metal substrate, and the sensor chip having a plurality of sensor chip bonding pads (21); an electrical connection assembly (300) which electrically connects a metal bonding pad and a sensor chip bonding pad; and a packaging material cover (400) which covers the metal substrate, the sensor chip and the electrical connection assembly, where any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover.

An apparatus, and methods therefor, relates generally to an integrated circuit package. In such an apparatus, a platform substrate has a copper pad. An integrated circuit die is coupled to the platform substrate. A wire bond wire couples a contact of the integrated circuit die and the copper pad. A first end of the wire bond wire is ball bonded with a ball bond for direct contact with an upper surface of the copper pad. A second end of the wire bond wire is stitch bonded with a stitch bond to the contact.

An apparatus, and methods therefor, relates generally to an integrated circuit package. In such an apparatus, a platform substrate has a copper pad. An integrated circuit die is coupled to the platform substrate. A wire bond wire couples a contact of the integrated circuit die and the copper pad. A first end of the wire bond wire is ball bonded with a ball bond for direct contact with an upper surface of the copper pad. A second end of the wire bond wire is stitch bonded with a stitch bond to the contact.