A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A component package and a method of forming are provided. A first component package may include a first semiconductor device having a pair of interposers attached thereto on opposing sides of the first semiconductor device. Each interposer may include conductive traces formed therein to provide electrical coupling to conductive features formed on the surfaces of the respective interposers. A plurality of through vias may provide for electrically connecting the interposers to one another. A first interposer may provide for electrical connections to a printed circuit board or subsequent semiconductor device. A second interposer may provide for electrical connections to a second semiconductor device and a second component package. The first and second component packages may be combined to form a Package-on-Package (“PoP”) structure.

A component package and a method of forming are provided. A first component package may include a first semiconductor device having a pair of interposers attached thereto on opposing sides of the first semiconductor device. Each interposer may include conductive traces formed therein to provide electrical coupling to conductive features formed on the surfaces of the respective interposers. A plurality of through vias may provide for electrically connecting the interposers to one another. A first interposer may provide for electrical connections to a printed circuit board or subsequent semiconductor device. A second interposer may provide for electrical connections to a second semiconductor device and a second component package. The first and second component packages may be combined to form a Package-on-Package (“PoP”) structure.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device includes a substrate, a semiconductor chip, a plurality of bonding pads on a surface of the semiconductor chip, a plurality of probe pads on a surface of the semiconductor chip, a plurality of connection pads on a surface of the substrate, and a plurality of bonding wires that electrically connect the bonding pads and the connection pads. The plurality of bonding pads include a first bonding pad and a second bonding pad, the plurality of probe pads include a first probe pad and a second probe pad, and a part of the first probe pad is disposed between the second bonding pad and the second probe pad.

The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.