The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.