A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Package-On-Package (PoP) structures that includes stud bulbs is provided. According to an embodiment, a POP structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Package-On-Package (PoP) structures that includes stud bulbs is provided. According to an embodiment, a POP structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

Methods related to plating a through-wafer via of a gallium arsenide integrated circuit are disclosed. For example, to improve copper plating, a seed layer formed in the through-wafer vias can be modified to increase water affinity, rinsed to remove contaminants, and activated to facilitate copper deposition. Other methods related to metallizing a through wafer via in gallium arsenide integrated circuits are disclosed. Such methods can include copper plating a through wafer via of a gallium arsenide integrated circuit.

Methods related to plating a through-wafer via of a gallium arsenide integrated circuit are disclosed. For example, to improve copper plating, a seed layer formed in the through-wafer vias can be modified to increase water affinity, rinsed to remove contaminants, and activated to facilitate copper deposition. Other methods related to metallizing a through wafer via in gallium arsenide integrated circuits are disclosed. Such methods can include copper plating a through wafer via of a gallium arsenide integrated circuit.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.