H01L2224/48747

Semiconductor device

A semiconductor device of the disclosure comprises: a first wiring disposed on a semiconductor substrate; a first insulating film disposed on the first wiring; a first via disposed in the first insulating film so as to be connected to the first wiring; a second wiring disposed on the first insulating film so as to be connected to the first wiring through the first via; a first organic insulating film disposed on the second wiring; a second via disposed in the first organic insulating film so as to be connected to the second wiring; a third wiring disposed on the first organic insulating film so as to be connected to the second wiring through the second via; and a second organic insulating film disposed on the first organic insulating film. A pad opening portion through which the third wiring is exposed is provided in the second organic insulating film, and the first via, the second via, the second wiring, and the third wiring are made of metal whose main component is copper.

Semiconductor device

A semiconductor device of the disclosure comprises: a first wiring disposed on a semiconductor substrate; a first insulating film disposed on the first wiring; a first via disposed in the first insulating film so as to be connected to the first wiring; a second wiring disposed on the first insulating film so as to be connected to the first wiring through the first via; a first organic insulating film disposed on the second wiring; a second via disposed in the first organic insulating film so as to be connected to the second wiring; a third wiring disposed on the first organic insulating film so as to be connected to the second wiring through the second via; and a second organic insulating film disposed on the first organic insulating film. A pad opening portion through which the third wiring is exposed is provided in the second organic insulating film, and the first via, the second via, the second wiring, and the third wiring are made of metal whose main component is copper.

Method for manufacturing printed circuit boards

A method including: attaching a plurality of conductive tracks to at least one surface of a substrate, depositing a coating comprising at least one halo-hydrocarbon polymer on the at least one surface of the substrate, and soldering through the coating.

Method for manufacturing printed circuit boards

A method including: attaching a plurality of conductive tracks to at least one surface of a substrate, depositing a coating comprising at least one halo-hydrocarbon polymer on the at least one surface of the substrate, and soldering through the coating.

Package-On-Package (PoP) Structure Including Stud Bulbs and Method
20170025391 · 2017-01-26 ·

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Package-On-Package (PoP) Structure Including Stud Bulbs and Method
20170025391 · 2017-01-26 ·

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
20170005048 · 2017-01-05 ·

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
20170005048 · 2017-01-05 ·

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.