An electronic device includes: a semiconductor body; a front metallization region; a top buffer region, arranged between the front metallization region and the semiconductor body; and a conductive wire, electrically connected to the front metallization region. The top buffer region is at least partially sintered.

Techniques and mechanisms for provide interconnection with integrated circuitry. In an embodiment, a packaged device includes a substrate and one or more integrated circuit (IC) dies. A first conductive pad is formed at a first side of a first IC die, and a second conductive pad is formed at a second side of the substrate or another IC die. Wire bonding couples a wire between the first conductive pad and the second conductive pad, wherein a distal end of the wire is bonded, via a bump, to an adjoining one of the first conductive pad and the second conductive pad. A harness of the bump, which is less than a hardness of the wire, mitigates damage to the adjoining pad that might otherwise occur as a result of wire bonding stresses. In another embodiment, the wire includes copper (Cu) and the bump includes gold (Au) or silver (Ag).

A semiconductor device according to one embodiment of the present invention includes a wire electrically connecting a die pad and a semiconductor chip mounted on the die pad to each other, and an encapsulation body encapsulating the semiconductor chip. The die pad includes a wire-bonding region to which the wire is connected and a through hole penetrating through the die pad in a thickness direction. The wire-bonding region is covered by a metal film partially covering the die pad. The through hole is formed at a position overlapping the metal film. The encapsulation body includes a first portion formed over the die pad, a second portion formed under the die pad, and a third portion buried in the through hole of the die pad, wherein the first portion and the second portion of the encapsulation body are connected with each other via the third portion.

A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A bonding tool includes a wedge tool that presses a bonding wire against a principal plane of a structure such as an electrode to which the bonding wire is to be bonded. A groove formed in an end portion of a wedge tool body of the wedge tool is inclined along a longitudinal direction of the bonding wire so that a heel side of the groove is closer to the principal plane of the structure than a toe side of the groove. As a result, the wedge tool is inclined at a tilt angle and the bonding wire fits the groove in the end portion of the wedge tool body along the longitudinal direction of the bonding wire. Thus, a corner portion of the wedge tool does not contact the electrode.

A semiconductor device includes a BGA package including first bumps. A first semiconductor die is mounted to the BGA package between the first bumps. The BGA package and first semiconductor die are mounted to a carrier. A first encapsulant is deposited over the carrier and around the BGA package and first semiconductor die. The carrier is removed to expose the first bumps and first semiconductor die. An interconnect structure is electrically connected to the first bumps and first semiconductor die. The BGA package further includes a substrate and a second semiconductor die mounted, and electrically connected, to the substrate. A second encapsulant is deposited over the second semiconductor die and substrate. The first bumps are formed over the substrate opposite the second semiconductor die. A warpage balance layer is formed over the BGA package.

A semiconductor device includes a BGA package including first bumps. A first semiconductor die is mounted to the BGA package between the first bumps. The BGA package and first semiconductor die are mounted to a carrier. A first encapsulant is deposited over the carrier and around the BGA package and first semiconductor die. The carrier is removed to expose the first bumps and first semiconductor die. An interconnect structure is electrically connected to the first bumps and first semiconductor die. The BGA package further includes a substrate and a second semiconductor die mounted, and electrically connected, to the substrate. A second encapsulant is deposited over the second semiconductor die and substrate. The first bumps are formed over the substrate opposite the second semiconductor die. A warpage balance layer is formed over the BGA package.

Techniques and mechanisms for provide interconnection with integrated circuitry. In an embodiment, a packaged device includes a substrate and one or more integrated circuit (IC) dies. A first conductive pad is formed at a first side of a first IC die, and a second conductive pad is formed at a second side of the substrate or another IC die. Wire bonding couples a wire between the first conductive pad and the second conductive pad, wherein a distal end of the wire is bonded, via a bump, to an adjoining one of the first conductive pad and the second conductive pad. A harness of the bump, which is less than a hardness of the wire, mitigates damage to the adjoining pad that might otherwise occur as a result of wire bonding stresses. In another embodiment, the wire includes copper (Cu) and the bump includes gold (Au) or silver (Ag).