An electronic device includes a first electronic part, a second electronic part opposite the first electronic part, and a bonding portion between the first electronic part and the second electronic part. The bonding portion contains a solder containing a substance whose crystal structure reversibly changes in temperature rise and fall processes which accompany the operation of the electronic device or electronic equipment including the electronic device. A change in the crystal structure of the substance contained in the solder promotes recovery and recrystallization of the solder in the temperature rise and fall processes which accompany the operation of the electronic device or the electronic equipment. As a result, the coarsening of crystal grains in the solder is suppressed.

Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20 C. to about 190 C.

A method of bonding two substrates together includes applying a plurality of templating spheres to a first metal layer on a first substrate of the two substrates, applying a metal on the plurality of templating spheres to form a porous metal layer, and bonding a solder layer arranged on a second substrate of the two substrates to the porous metal layer with heat and pressure such that pores of the porous metal layer are filled with solder material and intermetallic compounds, forming a metal inverse opals layer bonding the first and second substrates together.