Patent classifications
H
H01
H01L
2224/00
H01L2224/01
H01L2224/02
H01L2224/04
H01L2224/05
H01L2224/05001
H01L2224/05099
H01L2224/05198
H01L2224/05298
H01L2224/05299
H01L2224/053
H01L2224/05338
H01L2224/05339
H01L2224/05339
Hybrid backside thermal structures for enhanced ic packages
12482779
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2025-11-25
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An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.