A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.

A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.

A method of forming solder bumps includes preparing a substrate having a surface on which a plurality of electrode pads are formed, forming a resist layer on the substrate, the resist layer having a plurality of openings, each of the openings being aligned with a corresponding electrode pad of the plurality of electrode pads, forming a conductive pillar in each of the openings of the resist layer, forming conductive layers to cover at least side walls of the resist layer in the openings to block gas emanating from the resist layer, filling molten solder in each of the openings in which the conductive layers has been formed and removing the resist layer.