Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.

An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

A method for producing a joined structure according to the present invention includes: a reflow step of heating a first member and a solder material while keeping them in contact with each other in a reflow chamber to melt a solder alloy constituting the solder material, the reflow step including: a first reflow step of melting the solder alloy with an atmosphere in the reflow chamber reduced to a first pressure P.sub.1 lower than the atmospheric pressure; and a second reflow step of, after the first reflow step, melting the solder alloy with the atmosphere in the reflow chamber reduced to a second pressure P.sub.2 lower than the first pressure P.sub.1.

A method for producing a joined structure according to the present invention includes: a reflow step of heating a first member and a solder material while keeping them in contact with each other in a reflow chamber to melt a solder alloy constituting the solder material, the reflow step including: a first reflow step of melting the solder alloy with an atmosphere in the reflow chamber reduced to a first pressure P.sub.1 lower than the atmospheric pressure; and a second reflow step of, after the first reflow step, melting the solder alloy with the atmosphere in the reflow chamber reduced to a second pressure P.sub.2 lower than the first pressure P.sub.1.

A micro LED display panel includes a substrate, a plurality of first metal electrodes and a plurality of metal pads on a surface of the substrate, a connection layer on the substrate, a plurality of micro LEDs on a side of the connection layer away from the substrate. The connection layer includes conductive particles. Each of the micro LEDs is coupled to at least one of the first metal electrode. A side of each of the metal pads away from the substrate is coupled to some of the conductive particles in the connection layer to form a metal retaining wall. The metal retaining walls enhance structural strength of the micro LED display panel and avoid breakage of any of the micro LEDs.

A micro LED display panel includes a substrate, a plurality of first metal electrodes and a plurality of metal pads on a surface of the substrate, a connection layer on the substrate, a plurality of micro LEDs on a side of the connection layer away from the substrate. The connection layer includes conductive particles. Each of the micro LEDs is coupled to at least one of the first metal electrode. A side of each of the metal pads away from the substrate is coupled to some of the conductive particles in the connection layer to form a metal retaining wall. The metal retaining walls enhance structural strength of the micro LED display panel and avoid breakage of any of the micro LEDs.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

A method for transferring a micro device, includes: a compression step in which a carrier film having a micro-device attached to an adhesive layer thereof is brought into contact with a substrate comprising a solder deposited on metal electrodes formed on the substrate and is compressed on the substrate; a first adhesive strength generation step in which the solder disposed between the micro-device and the metal electrodes is compressed in the compression step to generate first adhesive strength between the micro-device and the solder; a second adhesive generation step in which the micro-device is bonded to the adhesive layer through press-fitting in the compression step to generate second adhesive strength between the micro-device and the adhesive layer; and a release step in which the carrier film is separated from the substrate, with the micro-device adhered to the solder.