An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

In an embodiment an electronic device includes a carrier board having an upper surface, an electronic chip mounted on the upper surface of the carrier board, the electronic chip having a mounting side facing the upper surface of the carrier board, a flexible mounting layer arranged between the upper surface of the carrier board and the mounting side of the electronic chip, the flexible mounting layer mounting the electronic chip to the carrier board, wherein the mounting side has at least one first region and a second region, and wherein the electronic chip has at least one chip contact element in the first region and at least one connection element arranged on the at least one first region and connecting the at least one chip contact element to the upper surface of the carrier board, wherein the flexible mounting layer separates the second region from the connection element.

In an embodiment an electronic device includes a carrier board having an upper surface, an electronic chip mounted on the upper surface of the carrier board, the electronic chip having a mounting side facing the upper surface of the carrier board, a flexible mounting layer arranged between the upper surface of the carrier board and the mounting side of the electronic chip, the flexible mounting layer mounting the electronic chip to the carrier board, wherein the mounting side has at least one first region and a second region, and wherein the electronic chip has at least one chip contact element in the first region and at least one connection element arranged on the at least one first region and connecting the at least one chip contact element to the upper surface of the carrier board, wherein the flexible mounting layer separates the second region from the connection element.

A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

Provided is a circuit structure including a substrate, a pad, a dielectric layer, a conductive layer, an adhesion layer, and a conductive bump. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The conductive layer contacts the pad and extends from the pad to cover a top surface of the dielectric layer. The adhesion layer is disposed between the dielectric layer and the conductive layer. The conductive bump extends in an upward manner from a top surface of the conductive layer. The conductive bump and the conductive layer are integrally formed. A method of manufacturing the circuit structure is also provided.

Provided is a circuit structure including a substrate, a pad, a dielectric layer, a conductive layer, an adhesion layer, and a conductive bump. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The conductive layer contacts the pad and extends from the pad to cover a top surface of the dielectric layer. The adhesion layer is disposed between the dielectric layer and the conductive layer. The conductive bump extends in an upward manner from a top surface of the conductive layer. The conductive bump and the conductive layer are integrally formed. A method of manufacturing the circuit structure is also provided.

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

A semiconductor device includes a substrate that includes a first insulating layer, a conductive layer on the first insulating layer, a second insulating layer on the conductive layer, and an opening that passes through the conductive layer and the second insulating layer and in which part of the conductive layer is exposed, a conductive material that contacts at least the first insulating layer and the part of the conductive layer in the opening, and a semiconductor chip that has an electrode extending towards the first insulating layer within the opening and contacting the conductive material.