H01L2224/13339

FLEXIBLE LIGHTING DEVICE INCLUDING A NANO-PARTICLE HEAT SPREADING LAYER
20170365760 · 2017-12-21 ·

A lighting device is provided, including: a substrate having a first surface and a second surface opposite the first surface; one or more light-emitting structures formed on the first surface of the substrate; and a heat spreading and dissipating layer formed on the second surface of the substrate, wherein the heat spreading and dissipating layer comprises a polymer layer mixed with nano graphite particles.

FLEXIBLE LIGHTING DEVICE INCLUDING A NANO-PARTICLE HEAT SPREADING LAYER
20170365760 · 2017-12-21 ·

A lighting device is provided, including: a substrate having a first surface and a second surface opposite the first surface; one or more light-emitting structures formed on the first surface of the substrate; and a heat spreading and dissipating layer formed on the second surface of the substrate, wherein the heat spreading and dissipating layer comprises a polymer layer mixed with nano graphite particles.

CONDUCTIVE PARTICLE, AND CONNECTION MATERIAL, CONNECTION STRUCTURE, AND CONNECTING METHOD OF CIRCUIT MEMBER
20170347463 · 2017-11-30 ·

There is provided a conductive particle including a core particle containing a resin material, and a surface layer that covers a surface of the core particle and contains a solder material, in which a melting point of the solder material is equal to or lower than a softening point of the resin material.

Methods for forming pillar bumps on semiconductor wafers

The subject matter contained herein discloses methods for forming a vertical metallic pillar overlying an under bump metal pad further overlying a semiconductor substrate, and applying a discrete solder cap on a top surface of the pillar, wherein the metallic pillar is defined by at least one photoresist layer. The method includes heating a multi-element metallic paste containing a variable amount of metallic powder, a melting point depressant and a flux such that the metal powder sinters to form the metallic pillar and simultaneously adheres the metallic pillar to the underbump metal pad.

Methods for forming pillar bumps on semiconductor wafers

The subject matter contained herein discloses methods for forming a vertical metallic pillar overlying an under bump metal pad further overlying a semiconductor substrate, and applying a discrete solder cap on a top surface of the pillar, wherein the metallic pillar is defined by at least one photoresist layer. The method includes heating a multi-element metallic paste containing a variable amount of metallic powder, a melting point depressant and a flux such that the metal powder sinters to form the metallic pillar and simultaneously adheres the metallic pillar to the underbump metal pad.

Sintered Metal Flip Chip Joints

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

Sintered Metal Flip Chip Joints

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

Conductive connections, structures with such connections, and methods of manufacture
09793198 · 2017-10-17 · ·

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

Conductive connections, structures with such connections, and methods of manufacture
09793198 · 2017-10-17 · ·

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

Circuit backplane of display panel, method for manufacturing the circuit backplane, and display panel

A circuit backplane of a display panel, a method for manufacturing the same, and a display panel are provided. The circuit backplane includes a substrate and a plurality of circuit regions on the substrate. Each of the plurality of circuit regions includes a cathode soldered electrode, an anode soldered electrode, and a flow blocking island that are on the substrate. The flow blocking island is between the cathode soldered electrode and the anode soldered electrode, and in a thickness direction of the circuit backplane, a height of the flow blocking island is greater than each of a height of the cathode soldered electrode and a height of the anode soldered electrode.