Embodiments herein may relate to an apparatus with a package that includes a first substrate soldered to a second substrate via solder comprising an off-eutectic solder material. The off-eutectic solder material may form a joint between the first substrate and the second substrate. The off-eutectic solder material may be any suitable material that melts over a range of temperatures, which may provide a relatively slow collapse of the off-eutectic solder material during a melting process. The relatively slow collapse may provide a sufficient amount of time for gases to escape prior to collapse, and thus, the joint between the first substrate and the second substrate may have less voids compared to joints formed using eutectic solder materials. Other embodiments may be described and/or claimed.

Embodiments herein may relate to an apparatus with a package that includes a first substrate soldered to a second substrate via solder comprising an off-eutectic solder material. The off-eutectic solder material may form a joint between the first substrate and the second substrate. The off-eutectic solder material may be any suitable material that melts over a range of temperatures, which may provide a relatively slow collapse of the off-eutectic solder material during a melting process. The relatively slow collapse may provide a sufficient amount of time for gases to escape prior to collapse, and thus, the joint between the first substrate and the second substrate may have less voids compared to joints formed using eutectic solder materials. Other embodiments may be described and/or claimed.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

A bump-forming film is used for forming, on a semiconductor device such as a bumpless IC chip, bumps which are low in cost and can achieve stable conduction reliability. The bump-forming film is configured such that conductive fillers for bumps are arranged regularly in a planar view in an insulating adhesive resin layer. The regular arrangement has a periodic repeating unit in the longitudinal direction of the film. The straight line which connects one ends of the conductive fillers for bumps in the thickness direction of the film is substantially parallel to the surface of the film.

A bump-forming film is used for forming, on a semiconductor device such as a bumpless IC chip, bumps which are low in cost and can achieve stable conduction reliability. The bump-forming film is configured such that conductive fillers for bumps are arranged regularly in a planar view in an insulating adhesive resin layer. The regular arrangement has a periodic repeating unit in the longitudinal direction of the film. The straight line which connects one ends of the conductive fillers for bumps in the thickness direction of the film is substantially parallel to the surface of the film.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.