A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A formed article includes a metal particle which has a particle size in a range from 1 m to 20 m and consists of an outer shell and a core part. The core part contains Sn or a Sn alloy. The outer shell contains an intermetallic compound of Sn and Cu and covers 50% or more of a total surface area of the core part.

An electro-conductive paste includes a metal particle and a vehicle in which the metal particle is dispersed. The metal particle has a particle size in a range from 1 m to 20 m and consists of an outer shell and a core part. The core part contains Sn or a Sn alloy. The outer shell contains an intermetallic compound of Sn and Cu and covers 50% or more of a total surface area of the core part.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, ranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, ranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.