A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode. The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.

The present disclosure provides a method for preparing a high cohesive energy adsorbent for fluoride removal, which includes the following steps: S1. adding NaHF.sub.2—NiF.Math.6H.sub.2O additive to SiCO ceramic powder, and sintering at a temperature of 310-330° C. for 18-22h to obtain a sintered substance; S2. grinding the sintered substance to obtain particles with a size of 2-3 mm, and mixing the particles with polyacrylonitrile to form a composite polymer; and S3. molding the composite polymer by a vacuum baking process at a temperature of 75-85° C., then performing ball milling and sieving to obtain the high cohesive energy adsorbent for fluoride removal. The high cohesive energy adsorbent for fluoride removal may be used in the adsorption and separation of the C.sub.2F.sub.6—CHF.sub.3—CClF.sub.3 mixture system, and the contents of CHF.sub.3 and CClF.sub.3 are lowered to less than 10ppmv.

A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.

According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.

An electrochemical compressor utilizes a working fluid having a proton associable component, such as ammonia. Water may be reacted on a anode to form protons that are transported through an ion conducting membrane to the cathode side of the electrochemical compressor. The proton associable component of the working fluid will be pulled through the ion conducting membrane along with the proton. The ion conducting membrane may include perfluorosulfonic acid ionomer, polystyrene sufonic acid ionomer and/or carboxymethyl cellulose.

Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.

A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.

A catalyst for decomposing perfluorinated compounds includes an alumina carrier, at least one metal carried on the alumina carrier and selected from the group consisting of Zn, Ni, W, Zr, Ti, Ga, Nb, Co, Mo, V, Cr, Mn, Fe, and Cu, S carried on the alumina carrier, and rare-earth metals carried on the alumina carrier.