A synthesis method of an indole derivative capable of efficiently degrading a perfluorinated compound (PFC) and a use of the indole derivative are provided. The synthesis method includes dissolving an appropriate amount of indole, alkylamine, and formaldehyde in an ethanol solution, conducting a reaction at reflux under suitable conditions for a specified period of time with ZnCl.sub.2 or glacial acetic acid as a catalyst to form a reaction product, vacuum-drying the reaction product, and purifying the reaction product through column chromatography to obtain a novel indole derivative with a hydrophobic alkyl branch. The present indole derivative has some hydrophobicity and a positively charged amino group that can effectively capture PFCs in contaminated water to produce a sub-nanoscale self-assembled aggregate. Hydrated electrons generated by light irradiation can directly attack PFCs in the aggregate without long-distance mass transfer, improving the utilization rate of hydrated electrons and reduces the ratio of fed materials.

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

Embodiments disclosed herein include a plasma abatement process that takes effluent from a processing chamber and reacts the effluent with water vapor reagent within a plasma source placed in a foreline by injecting the water vapor reagent into the foreline or the plasma source. The materials present in the effluent as well as the water vapor reagent are energized by the plasma source, converting the materials into gas species such as HF that is readily scrubbed by typical water scrubbing abatement technology. An oxygen containing gas is periodically injected into the foreline or the plasma source relative to the water vapor injection to reduce or avoid the generation of solid particles. The abatement process has good destruction removal efficiency (DRE) with minimized solid particle generation.

A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

An apparatus for treating a substrate includes a chamber having a treatment space in which the substrate is treated, a substrate support unit that supports the substrate in the treatment space, a gas supply unit that supplies a gas into the treatment space, an exhaust line connected to the chamber, and a pressure-reducing member that reduces pressure in the exhaust line and releases process by-products generated in the treatment space. The exhaust line includes a first line connected to the chamber, a second line equipped with the pressure-reducing member, and a filter tube that connects the first line and the second line, and the filter tube has a corrugated side surface.

The present invention comprises a process for producing hydrogen, wherein in a first stage hydrocarbons are decomposed into solid carbon and into a hydrogen-containing gaseous product mixture, the hydrogen-containing gaseous product mixture, which has a composition in respect of the main components CH4, N2, and H2 of 20% to 95% by volume H2 and 80% to 5% by volume CH4 and/or N2, is discharged from the first stage at a temperature of 50 to 300° C., and this is supplied at a temperature differing from this exit temperature by not more than 100° C. to an electrochemical separation process and, in this second stage, the hydrogen-containing product mixture is separated in the electrochemical separation process at a temperature of 50 to 200° C. into hydrogen having a purity of >99.99% and a remaining residual gas mixture.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

A process for cleaning process gas removes sulfur oxides (SOx), nitrogen oxides (NOx), and particulate matter (PM) to produce a tail gas substantially free of these pollutants. The process oxidizes and absorbs SOx and NOx for storage as liquid acids. In some embodiments a PM removal stage and/or a SOx removal stage are provided in a close-coupled higher-pressure environment upstream from a turbocharger turbine. The process has example application in cleaning exhaust gases from industrial processes and large diesel engines such as ship engines.