The present disclosure describes material surface treatment systems and methods that employ a byproduct treatment system to receive a byproduct generated by application of a plasma, the byproduct treatment system configured to degrade the byproduct and exhaust the degraded byproduct from the material surface treatment. The disclosed byproduct treatment system modifies the byproduct prior to evacuation from the material treatment system in order to reduce or eliminate byproduct contamination into the surrounding atmosphere.

A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

Provided is a novel exhaust gas processing device which allows processing target exhaust gas having a large flow volume to be handled with a small-capacity plasma generator, by preheating a high-temperature decomposable gas component of the processing target exhaust gas. An exhaust gas processing device 10 preheats processing target exhaust gas F in the presence of moisture with heat from at least either an electric heater 15 or a heat exchanger 17 and subsequently thermally decomposes the exhaust gas with an atmospheric pressure plasma P. A device main body 11 has a heating decomposition chamber T therein. A plasma generator 14 is of a non-transferred type and is installed at a top surface portion 11a of the device main body 11. A reactor 12 has a cylindrical shape and is installed within the device main body 11 such that an upper end opening 12i thereof is directed toward a plasma emission port 14f of the plasma generator 14. A moisture supply unit 18 is provided at an inlet side of the device main body 11. At least either the electric heater 15 or the heat exchanger 17 is disposed in a first space T1.

Disclosed are methods and systems for removing submicron particles from a gas stream, in particular from urea prilling off-gas, wherein a Venturi ejector is used. A method comprises contacting a gas stream containing submicron particles in a Venturi ejector with an injected high velocity scrubbing liquid to provide a pumping action, wherein the scrubbing liquid has an initial velocity of at least 25 m/s and wherein the ratio of scrubbing liquid and gas flow is between 0.0005 and 0.0015 (m.sup.3/h)/(m.sup.3/h).

Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

The present disclosure provides a method for converting the target gas contained in the exhaust gas in plasma phase and an apparatus for implementing the method, the method comprising the steps of: generating a plasma in a conversion region in which the conversion of the target gas occurs; supplying, to the conversion region, a conversion promoting agent containing a conversion promoting element of which the first ionization energy is not greater than 10 eV for promoting the conversion of the target gas; supplying, to the conversion region, a conversion agent that produces conversion products by combining with the dissociation products of the target gas and prevents the dissociation products from recombining into the target gas; and supplying the exhaust gas containing the target gas to the conversion region.

This invention relates to modified MOF materials, methods of preparing them and processes using them. A modified MOF of the invention is modified by impregnating a MOF with an inorganic metal salt. The starting MOF contains at least one linker or ligand which contains an aryl amino group as part of its structure. These modified MOFs are able to adsorb either basic or acidic toxic industrial compounds (TIC). The modified MOFs can be used to remove TICs from various gaseous streams such as air.

The present invention efficiently captures a target object contained in an exhaust gas. A trap apparatus includes a tubular housing including a flow path through which an exhaust gas exhausted through an exhaust pipe flows, a plate-shaped first trap member arranged inside the housing so as to shield a central portion of the flow path when viewed in a direction along a central axis of the housing, and a plate-shaped second trap member arranged inside the housing at an interval from the first trap member in the direction along the central axis of the housing, the second trap member including an opening at a position corresponding to the first trap member.

A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

There is provided a technique capable of detoxifying a process gas even when the detoxification apparatus is stopped. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube; a process gas supplier; an exhauster; an exhaust gas process chamber in which the exhausted process gas is subject to a process; a first inert gas supplier; a second inert gas supplier; an exhaust pipe; and a controller controlling the first and the second inert gas supplier such that the first inert gas is supplied to the exhaust gas process chamber through the first inert gas supplier while the process gas is subject to the process in the exhaust gas process chamber and the second inert gas is supplied to the exhaust gas process chamber through the second inert gas supplier when the process in the exhaust gas process chamber is stopped.