Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure multiple measured optical signals from multiple periodic targets on the sample, and the targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures A scatterometry overlay technique is used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets. The scatterometry overlay technique is a phase based technique, and the imaging optical system is configured to have an illumination and/or collection numerical aperture (NA) and/or spectral band selected so that a specific diffraction order is collected and measured for the plurality of measured optical signals. In one aspect, the number of periodic targets equals half the number of unknown parameters.

A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

A device for semiconductor fabrication includes a substrate and a layer formed over the substrate, wherein the layer includes an alignment mark. The alignment mark includes a first plurality of elongated members that are oriented lengthwise along a first direction and are distributed along a second direction. The alignment mark further includes a second plurality of elongated members that are oriented lengthwise along a third direction perpendicular to the first direction and are distributed along the second direction, wherein the second direction is different from each of the first and third directions.

A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.

By forming a trench isolation structure after providing a high-k dielectric layer stack, direct contact of oxygen-containing insulating material of a top surface of the trench isolation structure with the high-k dielectric material in shared polylines may be avoided. This technique is self-aligned, thereby enabling further device scaling without requiring very tight lithography tolerances. After forming the trench isolation structure, the desired electrical connection across the trench isolation structure may be re-established by providing a further conductive material.

A device for semiconductor fabrication includes a substrate and a layer formed over the substrate, wherein the layer includes an alignment mark. The alignment mark includes a first plurality of elongated members that are oriented lengthwise along a first direction and are distributed along a second direction. The alignment mark further includes a second plurality of elongated members that are oriented lengthwise along a third direction perpendicular to the first direction and are distributed along the second direction, wherein the second direction is different from each of the first and third directions.