The present disclosure provides a laminate. The laminate includes a first film and a second film, wherein the first film is laminated to the second film. The first film includes a sealant layer containing (A) an ethylene-based polymer; and (B) a slip agent blend containing (i) a first polydimethylsiloxane having a number average molecular weight (Mn) from 30,000 g/mol to less than 300,000 g/mol; and (ii) a second polydimethylsiloxane having a number average molecular weight (Mn) from 300,000 g/mol to 2,000,000 g/mol.

A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1?10.sup.11 atoms/cm.sup.2 or less.

An electrochromic device is structured to selectively switch separate regions to separate transmission levels, based at least in part upon different respective sheet resistances of separate conductive layer regions. Sheet resistance of a conductive layer region can be associated with a transmission level to which a corresponding EC stack region can be switched, and a conductive layer with separate regions having separate sheet resistances causes corresponding EC stack regions to switch to different transmission levels. Sheet resistance in a conductive layer region can be adjusted via various processes, including introducing various chemical species into the conductive layer region to adjust a chemical species distribution in the region, where the chemical species distribution is associated with the sheet resistance of the region, heating conductive layer regions to induce oxidation of the region, adjusting the thickness of a conductive layer region, etc.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.

This invention relates to enhancing a gas-phase reaction in a plasma comprising: creating plasma by at least one plasma source, and wherein that the method further comprises: generating ultrasonic high intensity and high power acoustic waves having a predetermined amount of acoustic energy by at least one ultrasonic high intensity and high power gas-jet acoustic wave generator, where said ultrasonic high intensity and high power acoustic waves are directed to propagate towards said plasma so that at least a part of said predetermined amount of acoustic energy is absorbed into said plasma, and where a sound pressure level of said generated ultrasonic high intensity and high power acoustic waves is at least substantially 140 dB and where an acoustic power of said generated ultrasonic high intensity and high power acoustic waves is at least substantially 100 W.

A method is disclosed herein for treating a polymeric surface to resist non-specific binding of biomolecules and attachment of cells. The method includes the steps of: imparting a charge to the polymeric surface to produce a charged surface; exposing the charged surface to a nitrogen-rich polymer to form a polymerized surface; exposing the polymerized surface to an oxidized polysaccharide to form an aldehyde surface; and exposing the aldehyde surface to a reducing agent. Advantageously, a method is provided which produces surfaces that resist non-specific protein binding and cell attachment and that avoids the use of photochemical reactions or prior art specially designed compounds.

An electrochromic device is structured to selectively switch separate regions to separate transmission levels, based at least in part upon different respective sheet resistances of separate conductive layer regions. Sheet resistance of a conductive layer region can be associated with a transmission level to which a corresponding EC stack region can be switched, and a conductive layer with separate regions having separate sheet resistances causes corresponding EC stack regions to switch to different transmission levels. Sheet resistance in a conductive layer region can be adjusted via various processes, including introducing various chemical species into the conductive layer region to adjust a chemical species distribution in the region, where the chemical species distribution is associated with the sheet resistance of the region, heating conductive layer regions to induce oxidation of the region, adjusting the thickness of a conductive layer region, etc.

A graphic comprises a textile material comprising one of a woven or knit textile having first and second textile surfaces in an opposing relationship and a retroreflective material having first and second surfaces in an opposing relationship. One of the first and second textile surfaces and one of the first and second surfaces are adhered to one another by a second adhesive.

An antioxidant combined with UHMWPE prior to subjecting the UHMWPE to crosslinking irradiation. In one exemplary embodiment, the antioxidant is tocopherol. After the antioxidant is combined with the UHMWPE, the resulting blend may be formed into slabs, bar stock, and/or incorporated into a substrate, such as a metal, for example. The resulting product may then be subjected to crosslinking irradiation. In one exemplary embodiment, the UHMWPE blend is preheated prior to subjecting the same to crosslinking irradiation. Once irradiated, the UHMWPE blended product may be machined, packaged, and sterilized in accordance with conventional techniques.

A method for manufacturing a glass cover is provided, which includes following steps. A glass substrate is provided, wherein the glass substrate has a front surface and a back surface opposite to the front surface, and the front surface has a display region and a non-display region adjacent to the display region. The non-display region of the glass substrate is hazed. A glass cover and an electronic device are also provided. The glass cover is adapted to be disposed at an installation opening of a casing of the electronic device. The glass cover includes a glass substrate. The glass substrate has a front surface and a back surface opposite to the front surface, and the front surface has a display region and a non-display region adjacent to the display region, and the non-display region is hazed.