A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.

Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.

Laminated articles and layered articles, for example, low alkali glass laminated articles and layered articles useful for, for example, electrochromic devices are described.

A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Se.sub.2 or equivalent ABC absorber layer, such as an ABC.sub.2 layer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A.sub.r/B.sub.r, in the third at a ratio A.sub.r/B.sub.r lower than the previous, in the fourth at a ratio A.sub.r/B.sub.r higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV.sub.2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

An electrical transmission system has solar electrical generation stations mounted directly to existing utility poles along a transmission line. Solar panels and securing brackets define each solar electric generation station. Each station has at least one generally East facing panel, at least one generally South facing panel, and at least one generally West facing panel. A power coupling conducts electricity generated by the solar electric generation station into the transmission lines. In one embodiment, a plurality of spacer members support the separate and distinct solar collector surfaces in a fixed position relative to the utility pole and have a plurality of clamp passages. A plurality of clamps pass through the clamp passages to guide and retain the clamps. In another embodiment, a plurality of adjustable brackets affix with the spacer members adjacent a first end and to the utility pole adjacent a second end distal to the first end.

Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd.sub.1-xMn.sub.xTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

A photovoltaic module and a method for producing such modules is presented in which the resistance of the interconnects between neighboring photovoltaic cells is minimized and the dead-area is also minimized. This is achieved by routing the interconnects, in form of a finger, from a top contact of a first photovoltaic cell to a bottom contact of a second photovoltaic cell. The interconnect is isolated from the bottom contact of the first photovoltaic cell by means of the photovoltaic stack and the interconnect is connected to the bottom contact of the second photovoltaic cell in an opening of the photovoltaic stack.