An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.

Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.

An example methodology implementing the disclosed techniques includes receiving a plurality of measured semiconductor properties of one or more partially completed semiconductor devices, determining a measure of short circuit current density (J.sub.SC) of each of the one or more partially completed semiconductor devices, the J.sub.SC, measure based on a measure of semiconductor diffusion length (L.sub.D) and a measure of thickness, and determining a current voltage relationship of each of the one or more partially completed semiconductor devices. The method also includes calculating a current voltage (JV) curve based on the J.sub.SC, measure and the current voltage relationship of each of the one or more partially completed semiconductor devices, wherein the JV curve provides an indication of maximum achievable power point (P.sub.max) and open circuit voltage (V.sub.oc) of a semiconductor device completed from the one or more partially completed semiconductor devices, and determining a predicted performance characteristic of the semiconductor device.

A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.

According to embodiments provided herein, the performance of photovoltaic device can be improved by rapidly heating an absorber layer of a device in open-circuit to a high temperature for a short period of time followed by rapid quenching. The rapid heating may be accomplished by one or more pulses of high intensity electromagnetic energy. The energy may be visible light. The energy may be absorbed primarily in the absorber layer, such that the absorber layer is preferentially heated, promoting chemical reactions of dopant complexes. The dopant chemical reactions disrupt compensating defect complexes that have formed in the device, and regenerate active carriers.

According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.