A method of generating electricity from light, that uses a photovoltaic array, that includes a junction between an inorganic electron-donating layer and an inorganic electron-accepting layer. The electron-donating layer includes moieties which after photon activation have unpaired electrons, and wherein some of the electrons are freed when light strikes the electron-donating layer, thereby transforming the moieties into free radicals or equivalents but many of the freed electrons recombine. Also, many of the free radicals or equivalents in the triplet state are optimally responsive to a selective magnetic field that has been determined to optimally increase the lifetime of the triplet state of the free radicals and thereby forestall recombination of the freed electrons into the free radicals. A magnetic field of substantially the optimal strength that is substantially unvarying over the electron donating layer is created as the array is being exposed to light.

An article composed of sintered particles is produced by depositing ligand-containing particles on a substrate, then scanning the substrate with an electron beam that generates sufficient surface and subsurface heating to substantially eliminate the ligands and melt or sinter the particles into a cohesive film with superior charge carrier properties. The particles are sintered or melted together to form a polycrystalline layer that is substantially ligand-free to form, for example, a film such as a continuous polycrystalline film. The scanning operation is conducted so as to heat treat a controllably localized region at and below a surface of the particles by selecting a rate of deposited energy at the region to exceed a rate of conduction away from the substrate.

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.

One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a transparent front cover, a transparent back cover, and a plurality of polycrystalline-Si-based photovoltaic structures positioned between the front cover and the back cover. A respective polycrystalline-Si-based photovoltaic structure has a front surface facing the front cover and a back surface facing the back cover. The photovoltaic roof tile can further include a paint layer positioned on a back surface of the back cover facing away from the front cover. A color of the paint layer substantially matches a color of the front surface of the respective polycrystalline-Si-based photovoltaic structure.

A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a transparent front cover, a transparent back cover, and a plurality of polycrystalline-Si-based photovoltaic structures positioned between the front cover and the back cover. A respective polycrystalline-Si-based photovoltaic structure has a front surface facing the front cover and a back surface facing the back cover. The photovoltaic roof tile can further include a paint layer positioned on a back surface of the back cover facing away from the front cover. A color of the paint layer substantially matches a color of the front surface of the respective polycrystalline-Si-based photovoltaic structure.