Method for improving photovoltaic cell efficiency

Abstract

A method of generating electricity from light, that uses a photovoltaic array, that includes a junction between an inorganic electron-donating layer and an inorganic electron-accepting layer. The electron-donating layer includes moieties which after photon activation have unpaired electrons, and wherein some of the electrons are freed when light strikes the electron-donating layer, thereby transforming the moieties into free radicals or equivalents but many of the freed electrons recombine. Also, many of the free radicals or equivalents in the triplet state are optimally responsive to a selective magnetic field that has been determined to optimally increase the lifetime of the triplet state of the free radicals and thereby forestall recombination of the freed electrons into the free radicals. A magnetic field of substantially the optimal strength that is substantially unvarying over the electron donating layer is created as the array is being exposed to light.

Claims

1. A method of generating electricity from light, comprising: (a) providing a photovoltaic array, including a junction between an inorganic electron-donating layer, and an inorganic electron-accepting layer and a load connected between said inorganic electron donating layer and inorganic electron-accepting layer; (b) creating a magnetic field with a field strength between 1 and 10 millitesla, wherein said magnetic field is substantially spatially unvarying over said inorganic electron-donating layer, as said photovoltaic array is being exposed to sun light, the magnetic field preventing some recombinations of free radicals in triplet state, said preventing some recombinations of free radicals in triplet state thereby increasing the efficiency of said photovoltaic array.

2. The method of claim 1, wherein said inorganic electron-donating layer comprises crystalline material.

3. The method of claim 2, wherein said crystalline material, is crystalline silicon.

4. The method of claim 3, wherein said crystalline silicon is polycrystalline silicon.

5. The method of claim 4, wherein said polycrystalline silicon is ribbon silicon.

6. The method of claim 3, wherein said crystalline silicon is monocrystalline silicon.

7. The method of claim 2, wherein said crystalline material is a perovskite material.

8. The method of claim 1, wherein said electron-donating layer comprises amorphous silicon.

9. The method of claim 1, wherein said inorganic electron-accepting layer is comprised of nanocrystals.

10. The method of claim 1, wherein said magnetic assembly comprises two Helmholtz coils, spaced in symmetric fashion about said photovoltaic array.

11. The method of claim 1, further including a step of repeatedly varying an applied magnetic field strength and measuring a resultant current produced by said photovoltaic array, prior to performing the step of paragraph (c), in order to determine said optimal magnetic field strength.

12. The method of claim 1, wherein said magnetic field is created by a magnetic film positioned adjacent to said photovoltaic array.

13. The method of claim 1, wherein said magnetic field is created by particles intermixed with said inorganic electron-donating layer.

14. The method of claim 13, wherein said particles have an average major axis of less than a micrometer.

15. The method of claim 1, wherein said magnetic field is created by particles intermixed with said inorganic electron-accepting layer.

16. A method of generating electricity from light, comprising: (a) providing a photovoltaic array, including a junction between an inorganic electron-donating layer, and an inorganic electron-accepting layer and a load connected between said inorganic electron donating layer and inorganic electron-accepting layer; (b) creating a magnetic field with a field strength between 1 and 10 millitesla, wherein said magnetic field is substantially spatially unvarying over said inorganic electron-donating layer, as said photovoltaic array is being exposed to sun light, the magnetic field increasing the current produced by said photovoltaic array.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Exemplary embodiments are illustrated in referenced drawings. It is intended that the embodiments and figures disclosed herein are to be considered illustrative rather than restrictive.

(2) FIG. 1 is a front view of a photovoltaic assembly, according to the present invention.

(3) FIG. 2A is an illustration of the operation of a photovoltaic cell, in the absence of magnetic field effects.

(4) FIG. 2B is an illustration of the operation of a photovoltaic cell, in the presence of magnetic field effects.

(5) FIG. 3A is an illustration of the operation of a photovoltaic cell assembly, in the presence of magnetic field effects created by a magnetic film, that is part of the assembly.

(6) FIG. 3B is an illustration of the operation of a photovoltaic cell assembly, in the presence of magnetic field effects created by magnetic particles mixed into a layer of the cell.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(7) Many photovoltaic cells function by having an electron-donating layer made of a material. When struck by a photon of correct energy an electron is freed, thereby creating a potential flow of electricity. But the electron and the moiety from which it has been freed are likely to recombine, ending this process. When the electron-donating layer is a solid, the terminology used to describe the phenomenon of the freed electron and the moiety now missing an electron, having its origin in solid state research, is “active electron” and “hole” often referred to as an “exciton.” Terminology varies but when an entity is produced that has an unpaired orbital electron and a free electron, the system is the equivalent of a free radical and a freed electron and is termed a “free radical equivalent” herein.

(8) It is possible for a liquid, colloidal suspension or a gel to demonstrate that the “hole” actually displays the same characteristics, in terms of magnetic precession, as a free radical. In fact, what has been termed a “hole” in solid state research is a “free radical” but has simply not heretofore been recognized as such. Accordingly, a magnetic field that acts to forestall the recombination of free radicals with active electrons will increase the quantity of free electrons available for transport and therefore the efficiency of the photovoltaic cell. In particular a magnetic field that maintains free radicals in the triplet state, which greatly reduces the chance of recombination, will increase the number of active electrons and increase the efficiency of the photovoltaic cell.

(9) Each particular material will respond optimally to a magnetic field of optimal strength for maintaining free radicals in the triplet state. Some of the research referenced in the Background section involved the mixing of magnetic particles into a photosensitive layer. This naturally causes a magnetic field that varies with range to the nearest magnetic particle. A magnetic field at the optimal strength that does not vary significantly over the expanse of the electron-donating layer of photosensitive material will yield a greater increase in photovoltaic cell efficiency.

(10) The vast bulk of photo-voltaic cells in operation as of 2014 include an electron-donating layer comprising a silicon based material, such as monocrystalline silicon, polycrystalline silicon (including ribbon silicon) or amorphous silicon. Other materials placed in commercial use, in thin film structures in which the thickness of the electron-donating layer is less than 40 μm and could be as thin as 2 nm, include cadmium telluride (CdTe), copper indium gallium diselenide (CIGS). Amorphous silicon and crystalline silicon is also used in thin film applications.

(11) Referring to FIG. 1, a photovoltaic cell 10, is exposed to photons (light) 12, from the sun 14 and simultaneously exposed to a uniform magnetic field produced by a Helmholtz coil or array of such coils. 16. Electrons produced the photovoltaic cell are connected by an electric circuit 18, to an electric load 20, which may be, more specifically, an electric storage device. In the alternative a balanced arrangement of permanent magnets or a solid layer of such magnets may replace the Helmholtz coils 16, to achieve a similar effect.

(12) FIGS. 2A and 2B illustrate the effect of the magnetic field on the activity of freed electrons. In FIG. 2A, a photovoltaic cell 10 includes an electron-donating layer 30 is joined to an electron-accepting layer 32 by a junction (shown in greatly expanded form) where the process is unaffected by a magnetic field, photons 12 striking the n-type semiconductor free three electrons 38 (as an illustration) into the junction 34. One of these flows to the load 20, thereby forming a part of the current produced by the cell 10. But the other two recombine into the electron-donating layer (shortly after forming), typically into the same moiety from which the particular electron 38 originated. As shown in FIG. 2B, in the same photovoltaic cell the magnetic field 42 (generated from Helmholtz coils 16 shown in completely conceptual form) prevents some of the electrons 38 from recombining back into the moiety from which they came, so they join the flow to the load 20. Skilled persons will understand that this is merely an illustration, and that in reality even with the magnetic field, many electrons recombine into the moiety from which they were ejected. The magnetic field, however, by causing more free radicals to remain in the triplet state, prevents many recombinations, and thereby contributes to the flow of electricity.

(13) As shown in FIG. 3A, in an additional preferred embodiment a magnetic paint or film 50 is positioned adjacent to electron-accepting layer 32, and configured to produce a magnetic field of a beneficial magnitude for preventing the recombination of electrons donated by electron-donating layer 30 back into layer 30 after having entered the junction 34. In an alternative preferred embodiment a magnetic film is placed into electron-donating layer 30 with the same object of placing a beneficial magnetic field at junction 34.

(14) In FIG. 3B magnetic particles 52 are mixed into the electron-accepting layer 32, to create a uniform magnetic field at the junction 34. In one preferred embodiment particles 52 have an average major axis of less than a micrometer. In an alternative preferred embodiment, particles 52 are mixed into the electron-donating layer 30, to place a uniform magnetic field on junction 34. In another alternative, particles 52 are mixed into both electron-accepting layer 32 and electron-donating layer 30.

(15) In one set of embodiments electron-donating layer 30 and electron-accepting layer 34 are both made of similar material, such as crystalline silicon, but where electron donating layer 30 is n-type and electron-accepting layer 34 is p-type. If comprised of crystalline silicon, layers 30 and 34 may be either monocrystalline silicon or polycrystalline silicon. Alternatively layers 30 and 34 are comprised of amorphous silicon or a thin film material such as CdTe or CIGS. In an alternative set of embodiments, the electron-donating layer 30 is comprised of conjugated polymers and the electron-accepting layer 34 is comprised of inorganic nanocrystals. In an alternative preferred embodiment electron-donating layer 30 or electron-accepting layer 32 or both are made of a perovskite.

(16) For each one of the above recited materials, there is a corresponding magnetic field strength that will typically have a value of between 10 and 100 gauss (1 and 10 millitesla) that optimally extends the triplet state lifetimes in free radicals formed in the material.

(17) To determine the optimal magnetic field strength is a fairly easy process, however. A simple experiment may be configured by taking a photovoltaic cell and placing it between two Helmholtz coils, as shown in FIG. 1. A light having known characteristics is then shined upon the photovoltaic cell and various magnetic field strengths are applied, with the resultant electric current produced by the photovoltaic cell measured. In one preferred method a time period wherein no magnetic field is applied is interspersed between the times when a magnetic field is applied, to eliminate the effect of the previous test for magnetic field effect.

(18) While a number of exemplary aspects and embodiments have been discussed above, those possessed of skill in the art will recognize certain modifications, permutations, additions and sub-combinations thereof. It is therefore intended that the following appended claims and claims hereafter introduced are interpreted to include all such modifications, permutations, additions and sub-combinations as are within their true spirit and scope.