The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

A solar cell module, which is easily coordinated with the color of an exterior member at the installation position, comprises a solar cell; a light receiving side sealing material and a light receiving side protection member laminated and disposed in this order on a light receiving side with reference to the solar cell; and a back-side sealing material and a back-side protection member laminated and arranged in this order on a back side on the opposite side from the light receiving side. A value computed from a measured value of the color of reflected light combining positive reflected light and diffused reflected light which are based on light that has become incident on an object to be measured, and a measured value of the color only of the diffused reflected light based on the light that has become incident on the object to be measured, satisfies a specific condition.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating.

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x > y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m > n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈ [0.97, 7.58].

A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and conductively bonded to each other in their overlapping regions to form super cells, which may be arranged to efficiently use the area of the solar module.

A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.

A PERC solar cell selective emitter includes a silicon wafer, first and second doped regions and a laser doped region with doped layers. First doped regions are located between the doped regions of each doped layer, and each second doped region is located between two adjacent doped layers. The PERC solar cell includes the selective emitter, a front anti-reflective layer on the surface of a front passivation layer, and a positive electrode. The positive electrode includes first silver paste layers on the surfaces of the laser doped regions and second silver paste layers on the surface of the front anti-reflective layer corresponding to the first doped regions. The second silver paste layers are in electrical contact with the first silver paste layers. Damage of laser to silicon wafers is reduced, compounding in silver paste areas is reduced, an open circuit voltage is increased, and battery efficiency is improved.

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.