An organic electroluminescence device having a layer of an organic light emitting medium which comprises (A) a specific arylamine compound and (B) at least one compound selected from specific anthracene derivatives, spirofluorene derivatives, compounds having condensed rings and metal complex compounds and is disposed between a pair of electrodes and an organic light emitting medium comprising the above components (A) and (B) are provided. The organic electroluminescence device exhibits a high purity of color, has excellent heat resistance and a long life and efficiently emits bluish to yellowish light. The organic light emitting medium can be advantageously used for the organic electroluminescence device.

Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

The present invention relates to the technical field of inorganic nanofilm materials, and provides a method for preparing a tungsten sulfide thin film. The method comprises the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure. The present invention further provides a tungsten sulfide thin film prepared through the method. By means of the method according to the present invention, large-area preparation of the W—S—W thin film is realized, and the quality of the prepared W—S—W thin film is considerably improved, which greatly improves the electrical performance of the W—S—W thin film.

A temperature measuring device, a process for manufacturing the device, and a system for measuring an impact point incorporating the device. According to one aspect, a temperature measuring device includes a thin film sheet made of magneto-metallic material such that, in use and the presence of an applied magnetic field, a change of temperature in one region of the sheet generates an electric voltage in the region, the generated electric voltage being readable through means for reading electric voltage corresponding to the region. According to another aspect, there is a process for manufacturing the device. According to yet another aspect, there is a system for measuring an impact point, of radiation or particles, incorporating the device.

A process for treatment of nanoparticles of mineral filler for obtaining processed nanoparticles for use in polymerization in the presence of nanoparticles which includes the steps of (a) drying a mineral filler with an inert gas to remove catalyst poisons; (b) mixing the mineral filler dried obtained in step (a) with a swelling agent in a liquid state or near a critical state or in the supercritical state; (c) subjecting the swelling agent of the mixture obtained in step (b) to an endoenthalpic or isoentalphic phase change by altering the conditions of the temperature and/or pressure; (d) subjecting the nanoparticles of the mixture obtained in step (c) to contact of scavenging agent to react with catalyst poisons; then the mixture obtained in step (d) can be dried in a step (e) with an inert gas to remove sub-products from scavenging agent and catalyst poisons to obtain the treated nanoparticles.

A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.

An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.

The present disclosure relates to a fibrous electrode and a supercapacitor including the same. In the fibrous electrode, a carbon nanotube sheet is spirally wound on a surface of an elastic fiber. Thus, the fibrous electrode may maintain a fiber shape, and an electrical connection structure in the carbon nanotube sheet may not be damaged by deformation of the elastic fiber. That is, the fibrous electrode may be reversibly changed to maintain excellent electrical conductivity. In addition, the fibrous electrode has a fiber shape having a diameter of hundreds of micrometers, and thus the fibrous electrode may be light and may have excellent durability and excellent life span characteristics.

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.W, width W.sub.W,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, thickness of the nanowire/nanosheet H.sub.W,i, number i, i being an integer from 1 to N.sub.W, corner radius R.sub.W,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, R.sub.W,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.