Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.

The present invention relates to metal coatings and methods thereof. In certain embodiments, the invention relates to ultra-low wear noble metal alloys, such as for use in electrical contact coatings.

Inefficient dissipation of heat limits the performance of electronic devices. Thermal interface materials (TIMs) can be used in electronic devices to dissipate heat more effectively and efficiently. Nanocomposites have been prepared using functionalized boron nitride nanosheets (BNNS). The incorporation of soft-ligand functionalized BNNS in a metal matrix was used to nanofabricate kinetically-trapped nanocomposites TIMs.

A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of M.sub.n+1AX.sub.n to form a nanosheet, the nanosheet having a formula of M.sub.n+1X.sub.nT.sub.s, and reducing the nanosheet having a formula of M.sub.n+1X.sub.nT.sub.s to form an MXene nanosheet, the MXene nanosheet having a formula of M.sub.n+1X.sub.n, wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, T.sub.s is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.

An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein. The epitaxial layer is a substantially homogenous material from the substrate.

An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.

According to one embodiment, a method includes forming a nickel oxide/hydroxide active film onto a substrate from a solution including a nickelous salt and an electrolyte, where the nickel oxide/hydroxide active film has a physical characteristic of maintaining greater than about 80% charge over greater than 500 charge/discharge cycles, and wherein the nickel oxide/hydroxide active film has a physical characteristic of storing electrons at greater than about 0.5 electron per nickel atom.

A process for manufacturing colloidal nanosheet, by lateral growth, on an initial colloidal nanocrystal, of a crystalline semiconductor material represented by the formula M.sub.nX.sub.y, where M is a transition metal and X a chalcogen. The process includes the following steps: The preparation of a first organic solution, non or barely coordinating used as a synthesis solvent and including at least one initial colloidal nanocrystal; The preparation of a second organic solution including precursors of M and X, and including an acetate salt. And the slow introduction over a predetermined time scale of a predetermined amount of the second solution in a predetermined amount of the first solution, at a predetermined temperature for the growth of nanosheets. The use of the obtained material is also presented.

A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.