Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

A method is described for preparing a nanorods assembly. The method comprises providing a mixture comprising at least a liquid crystal and nanorods and depositing said mixture on the surface of at least substrate. The method further comprises aligning said nanorods with their long axis of the nanorods along a preferred direction on said substrate resulting in a nanorods and liquid crystal assembly, said aligning being performed by applying an external alternating current electrical field.

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.W, width W.sub.W,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, thickness of the nanowire/nanosheet H.sub.W,i, number i, i being an integer from 1 to N.sub.W, corner radius R.sub.W,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, R.sub.W,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

A method is presented for forming a nanowire electrode. The method includes forming a plurality of nanowires over a first substrate, depositing a conducting layer over the plurality of nanowires, forming solder bumps and electrical interconnections over a second flexible substrate, and integrating nanowire electrode arrays to the second flexible substrate. The plurality of nanowires are silicon (Si) nanowires, the Si nanowires used as probes to penetrate skin of a subject to achieve electrical biopotential signals. The plurality of nanowires are formed over the first substrate by metal-assisted chemical etching.

Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Devices, compositions, and methods are described which provide a tubular nanostructure or a composite tubular nanostructure targeted to a lipid bilayer membrane. The tubular nanostructure includes a hydrophobic surface region flanked by two hydrophilic surface regions. The tubular nanostructure is configured to interact with a lipid bilayer membrane and form a pore in the lipid bilayer membrane. The tubular nanostructure may be targeted by including at least one ligand configured to bind to one or more cognates on the lipid bilayer membrane of a target cell.

A biomarker detection device comprising: a microfluidic biosensor further comprising a biomarker functionalized polymer single nanowire connecting a pair of gold electrodes on a silicon wafer; the biomarker functionalized polymer single nanowire s coupled to a gate electrode by a liquid electrolyte gate; and a tunable gate voltage connected to the gate electrode.

The present invention provides a method of producing ternary metal-based nanowire networks. The method comprises combining an aqueous mixture of a platinum hydrate, a ruthenium hydrate, and an iron hydrate with a solution of hexadecyltrimethylammonium bromide in chloroform to form an inverse micellar network; adding a reducing agent to reduce metal ions within the inverse micellar network; and isolating the nanowires. The relative amounts of the platinum, ruthenium and iron in the mixture correlate to the atomic ratio of the platinum, ruthenium and iron in the ternary nanowires. The diameters of the ternary nanowires are from about 0.5 nm to about 5 nm.