A method is disclosed of forming magnetically tunable photonic crystals comprising: synthesizing one or more precursory nanoparticles with anisotropic shapes; coating the one or more anisotropic precursory nanoparticles with silica to form composite structures; converting the one or more anisotropic precursory nanoparticles into magnetic nanomaterials through chemical reactions; and assembling the anisotropic magnetic nanoparticles into photonic crystals in a solvent.

High resolution active matrix nanowire circuits enable a flexible platform for artificial electronic skin having pressure sensing capability. Comb-like interdigitated nanostructures extending vertically from a pair of opposing, flexible assemblies facilitate pressure sensing via changes in resistance caused by varying the extent of contact among the interdigitated nanostructures. Electrically isolated arrays of vertically extending, electrically conductive nanowires or nanofins are formed from a doped, electrically conductive layer, each of the arrays being electrically connected to a transistor in an array of transistors. The nanowires or nanofins are interdigitated with further electrically conductive nanowires or nanofins mounted to a flexible handle.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

A method for synthesizing nanostructures includes introducing a solution of seed crystals into an initial growth solution to form a nanostructure synthesis mixture. The initial growth solution includes a precursor material and a reducing agent in a surfactant solution. Growth of nanostructures in the nanostructure synthesis mixture is monitored during a period of anisotropic growth of the nanostructures to determine a shift from stage II growth of the nanostructures to stage III growth of the nanostructures. The shift from stage II growth to stage III growth is identified, and after identifying the shift, a second growth solution is added to the nanostructure synthesis mixture coincident in time with the shift. The second growth solution includes the precursor material and the reducing agent in the surfactant solution.

A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.

A quantum wire device includes a barrier formed by an insulator or a wide bandgap semiconductor, and metal quantum wires comprising a metal material and embedded in the barrier. Potential wells are formed for electrons in the metal quantum wires by the insulator or the wide bandgap semiconductor. The work function of the metal quantum wires is reduced by quantum confinement compared to a bulk form of the metal material. The metal quantum wires are electrically connected. The metal quantum wires include an exposed active area for electron emission or electron collection.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

A method of fabricating polymer single nanowires, comprising the steps of: spin coating a polymethylmethacrylate resist onto a silicon wafer patterned with at least one gold electrode pair; creating a nanochannel using e-beam lithography between each pair of the at least one gold electrode pairs; placing the silicon wafer into an aniline monomer polymerization solution; reacting the polymerization solution to give a coated wafer and a polyaniline film; and cleaning the coated wafer of polymethylmethacrylate resist and polyaniline film to give at least one gold electrode pair with a connecting polymer single nanowire.