The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

A magnetic trap is configured to arrange at least one diamagnetic rod. The magnetic trap includes first and second magnets on a substrate that forms the magnetic trap defining a template configured to self-assemble diamagnetic material. Each of the first and second magnets extends along a longitudinal direction to define a magnet length, and contact each other to define a contact line. The first magnet and the second magnet have a diametric magnetization in a direction perpendicular to the contact line and the longitudinal direction so as to generate a longitudinal energy potential that traps the diamagnetic rod along the longitudinal direction.

In order to provide a method for producing silver nanowires in which a local maximum of optical absorption in the plasmon absorption band can be shifted toward the short wavelength side without making the wire diameter smaller, a method for producing silver nanowires includes a step of heating a mixed liquid of a dispersion of silver nanowires and metal ions of a transition metal that is different from silver, and reducing the metal ions, thereby intermittently precipitating clumps of the transition metal on a surface of the silver nanowires. The thus produced silver nanowires have metal clumps intermittently along the length direction, and a local maximum of optical absorption in the plasmon absorption band of the silver nanowires has been shifted toward the short wavelength side.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Disclosed herein is a quantum rod light-guide plate for a backlight module of a liquid crystal display. The quantum rod light-guide plate includes a light-guide substrate with a side as a light in surface, a prism layer and a quantum rod layer. The prism layer is disposed on a first surface of the light-guide substrate and includes a plurality of parallel strip-shaped prisms extending along an extending direction parallel to the light incident surface of the light-guide substrate. The quantum rod layer is disposed on a second surface of the light-guide substrate opposite to the side of the prism layer, wherein the second surface is a light exiting surface and includes a plurality of quantum rods, wherein the major axes of the quantum rods are aligned along a direction parallel to the extending direction. With the quantum rod light-guide plate, the utilization of the backlight can be increased.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

In a transparent electrode based on a metal material having reduced light reflectance, a light absorbing layer having black characteristic is formed on a lower surface, a partition wall, and/or an upper surface of a metal wire, and thus, light reflectance of transparent electrode is minimized. In a method of manufacturing a transparent electrode, the light absorbing layer can be selectively formed on the upper and lower surfaces and the partition wall of the metal wire having a fine line width by using self-aligning and a spontaneous pattern effect. A conductive wire is implemented by using an imprinting process using an elastic body-based stamp, and thus, conductive wires having a fine line width and an excellent aspect ratio can be formed, so that it is possible to improve electric conductivity and transmittance.

Described is a composition suitable for the preparation of an electroconductive transparent layer, said composition comprising silver nanowires and fibers of crystalline cellulose.

A method of fabricating polymer single nanowires, comprising the steps of: spin coating a polymethylmethacrylate resist onto a silicon wafer patterned with at least one gold electrode pair; creating a nanochannel using e-beam lithography between each pair of the at least one gold electrode pairs; placing the silicon wafer into an aniline monomer polymerization solution; reacting the polymerization solution to give a coated wafer and a polyaniline film; and cleaning the coated wafer of polymethylmethacrylate resist and polyaniline film to give at least one gold electrode pair with a connecting polymer single nanowire.

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.