Patent classifications
Y10S977/788
EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME
An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein. The epitaxial layer is a substantially homogenous material from the substrate.
Labelled silica nanoparticles for immunochromatographic reagent, immunochromatographic test strip using the same, and immunochromomatographic fluorescence-detecting system or radiation-detecting system
Labelled silica nanoparticles for immunochromatographic reagent, comprising silica nanoparticles containing a labelled substance.
Perovskite nanocrystalline particles and optoelectronic device using same
Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; can form a lamellar structure in which an organic (or A site) plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane.
Epitaxial structure and method for making the same
An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein.
GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
Using chemical vapor deposited films to control domain orientation in block copolymer thin films
Vacuum deposited thin films of material are used to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nano structured features in a block copolymer film that can serve as lithographic patterns.
Organic-inorganic hybrid perovskite nanocrystal particle light emitting body having two-dimensional structure, method for producing same, and light emitting device using same
Provided are an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter having a two-dimensional structure, a method for producing the same, and a light emitting device using the same. The organic-inorganic-hybrid perovskite nanocrystal particle light-emitter having a two-dimensional structure comprises an organic-inorganic-hybrid perovskite nanocrystal structure having a two-dimensional structure which can be dispersed in an organic solvent. Accordingly, the nanocrystal particle light-emitter comprises an organic-inorganic-hybrid perovskite nanocrystal having a crystal structure combining FCC and BCC; forms a lamellar structure where organic planes and inorganic planes are accumulated in an alternating manner; and can exhibit high color purity by confining excitons in the inorganic planes. In addition, since the exciton diffusion distance decreases and exciton binding energy increases, it is possible to prevent exciton annihilation caused by thermal ionization and delocalization of charge carriers, such that the nanocrystal particle light-emitter can have high luminescence efficiency at room temperature.
Germanane analogs and optoelectronic devices using the same
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
Semiconductor epitaxial structure
A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.
Perovskite light-emitting layer and device using the same
A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.