A broad-band photodetector utilizes perovskite hybrid material and quantum dots as light harvesters. In particular, the photodetector is configured so that the structural defects on the surface of a quantum dot layer are passivated with perovskite hybrid material. As a result, the trap states on the surface of the quantum dot material is reduced, allowing leakage currents in the quantum dot material to be significantly reduced. As such, the photodetector is able to achieve broad-band operation, with enhanced photoresponsitivity and detectivity.

A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO.sub.2. The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.

A method for manufacturing a quantum dot and a quantum dot are provided. The method includes adding a core semiconductor precursor solution into a seed composition solution. The seed composition solution includes a seed composition, and the seed composition is a dendrimer-metal nanoparticle composite. The core semiconductor precursor solution includes a first semiconductor ion and a second semiconductor ion. The method also includes carrying out a first synthesis reaction to form a core semiconductor material wrapping the seed composition. The core semiconductor material is formed by combining the first semiconductor ion with the second semiconductor ion.

A display device includes a backlight, a first substrate on a path of light output from the backlight, a second substrate facing the first substrate, a light amount control layer between the first and second substrates, a color filter layer on the second substrate at a pixel area, and a light conversion layer between the light amount control layer and the color filter layer. The light conversion layer outputs white light.

A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film containing at least one type of a nanocrystal quantum-dot, whereby the nanocrystal quantum dots are spaced by ligands to form a lattice, and the lattice of the quantum dots has an infill material that forms an inorganic matrix that isolates the nanocrystal quantum dots from atmospheric exposure.

The present invention provides a method for manufacturing a quantum dot color filter, which uses a printing mold to pick up quantum dots and printing the quantum dots into a partially cured photoresist layer and then separates the quantum dots and the printing mold, followed by irradiation of UV light to completely cure the photoresist layer so that the quantum dots may uniformly distributed in the photoresist layer. This simplifies the process of transferring a quantum dot layer and reduces cost; requires no process of forming a sacrifice layer and no step of dissolving the sacrifice layer to prevent damage to the quantum dot layer; allows the quantum dots to be uniformly distributed in the photoresist layer to thereby improve the utilization of the quantum dots; and allows a quantum dot color filter so manufactured to be used with white backlighting or blue backlighting for achieving displaying of three primary colors of red, green, and blue.

Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

A vehicle engine is provided that includes an exhaust manifold configured to emit a first emission. A heat shield is positioned proximate the exhaust manifold and has a shield substrate defining an aperture. An indicator is positioned over the aperture with a support substrate and a semiconductor layer. The semiconductor layer is configured to absorb the first emission and emit a second emission.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl.sub.aBr.sub.1-a-bI.sub.b).sub.3, wherein 0a1, 0b1.