A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method can be used for producing a fully active stack. A stack has the sides A, B, C and D running along the stacking direction. The method includes combining and temporarily making contact with the internal electrodes that make contact with the respective side on one of the sides B or D, such that the internal electrodes that make contact with the respective side can be electrically driven selectively. The electrically driven internal electrodes are electrochemically coated on the sides A and C. The stack is singulated to form a fully active stack with the electrochemically coated internal electrodes on the sides A and C. A method for producing a multilayer component comprising the fully active stack and a fully active multilayer component producible according to the method are furthermore proposed.

A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction. A manufacturing method for the capacitor includes forming the dielectric structure, and forming the first electrode and the second electrode simultaneously after the formation of the dielectric structure.

A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

Disclosed are apparatus and methodology for providing a precision laser adjustable (e.g., trimmable) thin film capacitor array. A plurality of individual capacitors are formed on a common substrate and connected together in parallel by way of fusible links. The individual capacitors are provided as laddered capacitance value capacitors such that a plurality of lower valued capacitors corresponding to the lower steps of the ladder, and lesser numbers of capacitors, including a single capacitor, for successive steps of the ladder, are provided. Precision capacitance values can be achieved by either of fusing or ablating selected of the fusible links so as to remove the selected subcomponents from the parallel connection. In-situ live-trimming of selected fusible links may be performed after placement of the capacitor array on a hosting printed circuit board.

In one embodiment, a system, comprising: a first non-magnetic conductive electrode; a second non-magnetic conductive electrode; a dielectric layer disposed between the first and second electrodes, the dielectric layer extending between the first and second electrodes; and first and second layers comprising plural pairs of magnetically coupled pairings of discrete magnets, the first and second layers separated by a non-magnetic material, wherein the magnets of at least the first layer are conductively connected to the first non-magnetic conductive electrode.

A method of manufacturing an electronic component includes preparing an unfired multilayer body, bonding one of first and second side surfaces of each unfired multilayer body to an adhesive sheet such that the unfired multilayer bodies are in at least one row, polishing the other side surface of each unfired multilayer body by rotating a polishing surface of a rotary polishing machine in contact with the other side surface of each unfired multilayer body, and forming a first insulating layer on the polished other side surface, wherein in the polishing the other side surface, at least one of the rotary polishing machine and the adhesive sheet is moved relative to the other to form a polish groove in the length direction, and the rotary polishing machine has a cylindrical shape and includes an outer circumferential surface that defines the polishing surface.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.