A coated metal sheet includes a steel substrate and a coating on at least one surface of the steel substrate. The coating includes between 0.2 and 0.7% by weight of Al, with a remainder of the metal coating being Zn and inevitable impurities. The coated metal sheet was subjected to a skin pass operation after coating. An outer surface of the metal coating has a waviness Wa.sub.0.8 of less than or equal to 0.55 μm.

The invention provides a method for the production of a 3D printed object (100), wherein the method comprises (i) a 3D printing stage, the 3D printing stage comprising 3D printing a 3D printable material (110) to provide the 3D printed object (100) of printed material (120), wherein the 3D printing stage further comprises forming during 3D printing a channel (200) in the 3D printed object (100) under construction, wherein the method further comprises (ii) a filling stage comprising filling the channel (200) with a curable material (140) and curing the curable material (140) to provide the channel (200) with cured material (150), wherein the cured material (150) has a lower stiffness than the surrounding printed material (120).

An embodiment relates to an ultrasonic additive manufacturing process, comprising joining a foil comprising a bulk metallic glass to a substrate; and forming a cladded composite comprising the foil and the substrate; wherein a thickness of the cladded composite is greater than a critical casting thickness of the bulk metallic glass, wherein the cladded composite comprises a cladding layer of the bulk metallic glass on the substrate and the bulk metallic glass comprises approximately 0% crystallinity, approximately 0% porosity, less than 50 MPa thermal stress, approximately 0% distortion, approximately 0 inch heat affected zone, approximately 0% dilution, and a strength of about 2,000-3,500 MPa.

An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1-10.sup.18 cm-.sup.3 from the mean concentration of this dopant in the peripheral region (104).

A waterproof membrane includes first and second non-woven layers each having first and second surfaces. A cross laminated film layer is disposed between the first and second non-woven layers. Tie layers are applied between the non-woven layers and the cross laminated film layer. A method of making a waterproof membrane, a method of establishing a waterproof barrier between a substrate and a tile, and a flexible membrane for use in a curvilinear surface are also disclosed.

A method of making an optical body an optical body is disclosed. The method includes coextruding a first skin layer and a first strippable skin layer on a first side of an optical layer. The first skin layer is disposed between the optical layer and the first strippable skin layer. The first skin layer includes a mixture of a polyacrylate and a second polymer which may or may not be miscible in the polyacrylate. The second polymer may be an anti-static polymer.

The present invention relates to an optical adhesive film which has excellent adhesive strength at room temperature and has improved efficiency in a rework process since peel strength is low at high temperatures. When attaching a touchscreen panel and an LCD by using the adhesive film of the present invention and separating the touchscreen panel and the LCD at high temperatures, the touchscreen panel and the LCD can be separated from each other without causing damage thereto. Additionally, the optical film of the present invention comprises two adhesive layers, wherein peeling occurs at the first adhesive layer having an adhesive composition such that a peeling surface can be controlled according to the convenience of a user.

A method for surface treatment of a metal material in a powder state is provided, the method including obtaining a powder formed from a plurality of particles of the metal material to be treated; and subjecting the powder to an ion implantation process by directing a beam of singly-charged or multi-charged ions towards an outer surface of the particles, the beam being produced by a source of singly-charged or multi-charged ions, whereby the particles have an overall spherical shape with a radius (R). There is also provided a material in a powder state formed from a plurality of particles having a ceramic outer layer and a metal core, the particles having an overall spherical shape.

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1.Math.10.sup.18 cm.sup.−3 from the mean concentration of this dopant in the peripheral region (104).