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GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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TECHNICAL SUBJECTS COVERED BY FORMER USPC
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TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Y10S977/755
Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
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Y10S977/758
Mono-atomic layer on delta-doped sheet
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Y10S977/758

GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME
20190006605 · 2019-01-03 ·

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

Germanane analogs and optoelectronic devices using the same
10074814 · 2018-09-11 · ·

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME
20170200906 · 2017-07-13 ·

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.