A light mixing chamber of a backlight includes a housing having a channel and a chamber exposed to the channel, an LED positioned within the chamber, and a capillary containing quantum dots positioned in the channel. A light guide plate is positioned adjacent the housing and adjacent the capillary. Relative dimensions of the elements of the light mixing chamber, as well as features added to the elements of the light mixing chamber, can be varied to balance efficiency and uniformity of light generated in the backlight.

The present invention relates to a quantum dot composite and a photoelectric device comprising the same, and more particularly, to a quantum dot composite having excellent optical characteristics, thereby improving the light efficiency of a photoelectric device, and a photoelectric device comprising the same. To this end, the present invention provides a quantum dot composite and a photoelectric device comprising the same, the quantum dot composite comprising: a matrix layer; a plurality of quantum dots dispersed inside the matrix layer; and a plurality of scattering particles dispersed inside the matrix layer in a manner of being disposed between the plurality of quantum dots, wherein the scattering particles have a hollow formed therein, thereby showing multiple refractive indices.

A novel quantum dot capable of near infrared emissions at wavelengths of 750-1100 is made by forming solid solutions of metal sulfide, metal selenide or metal sulfide selenide by incorporating a suitable amount of an additional metallic element or elements to provide an emission wavelength in the range of 750 nm to 1100 nm. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection.

Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; forms a lamellar structure in which an organic plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, the perovskite nanocrystalline particle have a particle size greater than or equal to a Bohr diameter beyond a quantum confinement effect, and simultaneously can implement high emission efficiency and emission wavelength which is almost not dependent on particle size. Furthermore, the perovskite nanocrystalline particle in accordance with the present invention, as a nanoparticle which is dispersible in an organic solvent, is applicable in various electronic devices such as light emitting devices, lasers, solar cells, etc.

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Surface-modified nanoparticles are produced by associating ligand interactive agents with the surface of a nanoparticle. The ligand interactive agents are bound to surface modifying ligands that are tailored to impart particular solubility and/or compatibility properties. The ligand interactive agents are crosslinked via a linking/crosslinking agent, such as hexamethoxymethylmelamine or a derivative thereof. The linking/crosslinking agent may provide a binding site for binding the surface modifying ligands to the ligand interactive agents.

The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

A nanoparticle phosphor element includes a capsule-shaped material that has a plurality of concave portions in a surface, a medium that is sealed in the capsule-shaped material, and a semiconductor nanoparticle phosphor that is dispersed in the medium, and a light emitting element includes a sealing material, and the nanoparticle phosphor element of the disclosure that is dispersed in the sealing material.

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.