Embodiments of the present disclosure propose two methods for integrating vacancy centers (VCs) on semiconductor substrates for forming VC-based spin qubit devices. The first method is based on using a self-assembly process for integrating VC islands on a semiconductor substrate. The second method is based on using a buffer layer of a III-N semiconductor material over a semiconductor substrate, and then integrating VC islands in an insulating carbon-based material such as diamond that is either grown as a layer on the III-N buffer layer or grown in the openings formed in the III-N buffer layer. Integration of VC islands on semiconductor substrates typically used in semiconductor manufacturing according to any of these methods may provide a substantial improvement with respect to conventional approaches to building VC-based spin qubit devices and may promote wafer-scale integration of VC-based spin qubits for use in quantum computing devices.

Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; can form a lamellar structure in which an organic (or A site) plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane.

The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.

The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.

The present invention provides anode materials, methods of producing them, anodes, methods of producing them, electrochemical cells, and lithium-ion batteries, where the anode material comprises a silicon monoxide nanoparticle. In certain embodiments, the silicon monoxide is porous or mesoporous. In certain embodiments, the porous or mesoporous silicon additionally comprises other materials within its pores, such as lithium.

The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.

In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.

Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.

The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.

This invention relates to a thermoelectric material constituted of nanostructures and a thermoelectric element and an optical sensor including the same, as well as to a method for manufacturing a thermoelectric material constituted of nanostructures. An object of the present disclosure is to achieve better thermoelectric characteristics of the thermoelectric material containing nanoparticles. The thermoelectric material includes a first material having a band gap and a second material different from the first material. The thermoelectric material contains a plurality of nanoparticles distributed in a base material which is a mixture of the first material and the second material. A composition of the second material in the thermoelectric material is not lower than 0.01 atomic % and not higher than 2.0 atomic % of the thermoelectric material.