A preservation method of a quantum dot and a quantum dot composition are provided. The method includes the following steps. A quantum dot is mixed with a preservative to form a quantum dot composition, wherein the preservative is a long-chain unsaturated compound, and based on the total weight of the quantum dot composition, the content of the quantum dot is 5 wt % to 80 wt %, and the content of the preservative is 20 wt % to 95 wt %. The quantum dot composition is sealed for preservation.

A light source includes a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light; wherein the light conversion layer includes a matrix resin and a quantum dot, wherein the white light includes a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, and wherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and a red light component having a peak wavelength of about 625 nanometers to about 645 nanometers.

The present invention provides a novel solution or route for metal phosphide (MP.sub.x) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri.sub.2).sub.2].sub.2, and/or single-source precursors. Synthetic routes to MP.sub.x nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.

Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

In certain embodiments, a first semiconductor material is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield nanoparticles or cores. The cores are overcoated by introducing a solution containing second semiconductor material precursors in a coordinating solvent into a suspension of cores at a desired elevated temperature and mixing for a period of time sufficient to cause diffusion of the shell into the core. The diffusion of the shell into the core causes the quantum dots to exhibit a broadened optical emission. The produced quantum dots may be incorporated into a quantum dot based radiation source.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

A metal oxide/silicon dioxide-coated quantum dot and a preparation method thereof are provided. The metal oxide/silicon dioxide is selected from aluminum oxide/silicon dioxide, zirconium dioxide/silicon dioxide, titanium dioxide/silicon dioxide or zinc oxide/silicon dioxide, and the content of the metal oxide/silicon dioxide in the metal oxide/silicon dioxide-coated quantum dot is 1 wt % to 98 wt %. The metal oxide/silicon dioxide-coated quantum dot is prepared by one of a sol-gel method and a pyrolysis method.