Y10S977/891

Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits

Embodiments of the present disclosure describe a method of fabricating spin qubit device assemblies that utilize dopant-based spin qubits, i.e. spin qubit devices which operate by including a donor or an acceptor dopant atom in a semiconductor host layer. The method includes, first, providing a pair of gate electrodes over a semiconductor host layer, and then providing a window structure between the first and second gate electrodes, the window structure being a continuous solid material extending between the first and second electrodes and covering the semiconductor host layer except for an opening through which a dopant atom is to be implanted in the semiconductor host layer. By using a defined gate-first process, the method may address the scalability challenges and create a deterministic path for fabricating dopant-based spin qubits in desired locations, promoting wafer-scale integration of dopant-based spin qubit devices for use in quantum computing devices.

Plasmonic nanoparticles, methods of making plasmonic nanoparticles and sensors made therefrom
11275089 · 2022-03-15 ·

A method of making free-standing ALD-coated plasmonic nanoparticles. The method comprises providing a plurality of semiconductor quantum dots. One or more conformal layers of dielectric material are deposited over the quantum dots to form dielectric-coated quantum dots. A conformal metallic nanoshell is deposited over the dielectric-coated quantum dots to form plasmonic nanoparticles. At least one layer chosen from i) the conformal layers of dielectric material and ii) the conformal metallic nanoshell is deposited using a vapor phase atomic layer deposition (ALD) process. Plasmonic nanoparticles and systems employing the nanoparticles are also disclosed.

Nanometer sized structures grown by pulsed laser deposition

Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber.

IRON NANOPARTICLES AND METHODS OF PRODUCTION

Techniques and methods are disclosed for producing a plurality of nanoparticles that can be used as catalysts to grow carbon or boron nitride nanotubes. The method includes mixing an iron salt including a ferrous or ferric ion with a long chain amine, thiol or polyphenol in a solvent comprising alcohol to produce a solution. Ferric or ferrous ion is reduced to zero valence iron. Nucleation of iron nanoparticles is initialized. The iron nanoparticles are capped to retard nanoparticle growth. The nanoparticles include an elemental iron core coated with a polyphenol that isolates the core from oxygen. The nanoparticles include an average diameter of less than or equal to 15.8 nanometers. The iron core may further include a secondary metal to form an iron-alloy. The secondary metal, in some applications, can be a transition metal.

Semiconductor Josephson junction and a transmon qubit related thereto

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Alignment of carbon nanotubes in confined channels

Methods for forming carbon nanotube arrays are provided. Also provided are the arrays formed by the methods and electronic devices that incorporate the array as active layers. The arrays are formed by flowing a fluid suspension of carbon nanotubes through a confined channel under conditions that create a velocity gradient across the flowing suspension.

CONTINUOUS BORON NITRIDE NANOTUBE FIBERS

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Continuous boron nitride nanotube fibers

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Self-assembly of nanostructures

Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.

Biomimetic limb and robot using the same

The disclosure relates to a biomimetic limb and robot using the same. The biomimetic limb includes: an arm and a biomimetic hand connected to the arm and including at least one biomimetic finger. The biomimetic finger includes a carbon nanotube layer and a vanadium dioxide layer (VO.sub.2) layer stacked with each other. Because the drastic, reversible phase transition of VO.sub.2, the biomimetic finger has giant deformation amplitude and fast response. An robot using the biomimetic limb is also provided.