A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSe.sub.xS.sub.1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core are provided. Also provided are methods of increasing the sphericity of nanostructures comprising subjecting nanocrystal cores to an acid etch step, an annealing step, or a combination of an acid etch step and an annealing step.

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

The method for producing noble metal nanocomposites involves reducing noble metal ions (Ag, Au and Pt) on graphene oxide (GO) or carbon nanotubes (CNT) by using Artocarpus integer leaves extract as a reducing agent. As synthesized MNPs/GO and MNPs/CNT composites have been characterized using X-ray diffraction (XRD), transmission electron microscope (TEM) imaging, and energy dispersive X-ray spectroscopy (EDX). The TEM images of prepared materials showed that the nanocomposites were 1-30 nm in size with spherical nanoparticles embedded on the surface of GO and CNT. This synthetic route is easy and rapid for preparing a variety of nanocomposites. The method avoids use of toxic chemicals, and the prepared nanocomposites can be used for biosensor, fuel cell, and biomedical applications.

A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.

A method of producing electronic plasmons by applying a bias to a molecular tunnel junction to excite plasmons, in which the molecular tunnel junction contains a top metallic electrode formed of a eutectic metal alloy and a metal oxide, a bottom metallic electrode formed of a transition metal, and a self-assembled monolayer formed of a plurality of organic molecules disposed between the top metallic electrode and the bottom metallic electrode. Also disclosed are a molecular tunnel junction for producing electronic plasmons and a method for preparing such a molecular tunnel junction.

A pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to 0.03 cm.sup.3/g is disclosed. A pre-polymer formulation comprising quantum dots and a cyclohexylacrylate monomer is further disclosed. Also disclosed are a quantum dot composition including quantum dots dispersed in a polymer matrix, the quantum dot composition being prepared from a pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to cm.sup.3/g; a method; and other products including a quantum dot composition described herein.

Provided are core-shell particles that have high luminous efficiency and are useful as quantum dots, a method for producing the same, and a film produced using the core-shell particles. The core-shell particles of the invention are core-shell particles having a core containing a Group III element and a Group V element; and a shell covering at least a portion of the surface of the core and containing a Group II element and a Group VI element, in which the proportion of the peak intensity ratio of the Group II element with respect to the peak intensity ratio of the Group III element as measured by X-ray photoelectron spectroscopy analysis is 0.25 or higher.

The invention relates to a self-passivating quantum dot and a preparation method thereof. The quantum dot is doped with a self-passivating element M and the self-passivating element M ranges from 0.1 wt % to 40 wt % in content. The self-passivating element is selected from the group consisting of Al, Zr, Fe, Ti, Cr, Ta, Si, and Ni. The preparation method comprises the steps of: adding a quantum dot core and a solvent into a reaction vessel, controlling the temperature to be 100-120 DEG C. and vacuumizing the reaction vessel for 30-50 min; filling the reaction vessel with inert gas, and rising the temperature to 230-280 DEG C.; and injecting a coating material precursor solution into the reaction vessel for coating the quantum dot core according to the injection amount being 1 or 2 times by molar concentration of the quantum dot core element per hour to prepare the self-passivating quantum dot. The self-passivating element M is doped with the quantum dot core precursor solution in the form of an M precursor, or is doped with the coating material precursor solution. Compared with the prior art, the self-passivating quantum dot has better appearance and is significantly improved in photostability.